I-II-V族稀磁半导体的结构和物性关联机制研究

项目名称： I-II-V族稀磁半导体的结构和物性关联机制研究

项目编号： No.61504166

项目类型： 青年科学基金项目

立项/批准年度： 2016

项目学科： 无线电电子学、电信技术

项目作者： 沈希

作者单位： 中国科学院物理研究所

项目金额： 20万元

中文摘要： 制备I-II-V族稀磁半导体Li(Zn, Mn)As系列样品，开展相应的电学性质和磁学性质的研究，利用球差校正透射电镜对顺磁和铁磁Li1+yZn1-xMnxAs样品（名义配比0 ≤ x ≤ 0.15；-0.1 ≤ y ≤ 0.2）进行原子尺度的微结构分析，确定对应不同居里温度TC的晶体结构，揭示形成调制结构的原因。研究Li掺杂的电荷调控机制，同时，探索Mn原子掺杂所构成的有序结构及其自旋调控机制。揭示I-II-V族稀磁半导体的微观结构与新颖物性的关联，探究电子电荷与自旋两个自由度调控的物理机制，为寻找性能优异的稀磁半导体材料提供实验依据。

中文关键词： I-II-V族稀磁半导体；电荷调控；自旋调控；球差校正透射电镜；调制结构

英文摘要： We focus on the synthesis, microstructural and physical property studies of the diluted magnetic I-II-V semiconductor Li(Zn, Mn)As series. Using aberration-corrected transmission electron microscopy and scanning transmission electron microscopy, we plan to carry out microstructural investigations with atomic resolution for the paramagnetic and ferromagnetic Li1+yZn1-xMnxAs (Nominal composition: 0 ≤ x ≤ 0.15; -0.1 ≤ y ≤ 0.2) compounds. We plan to determine the relationship between the structures and different Curie temperatures Tc and reveal the origin of modulated structures. In this project, we plan to conduct several works. 1) We will reveal the charge controlling mechanism induced by Li doping. 2) Besides, we will analyze the spin controlling mechanism induced by Mn doping and the long range ordering caused by the substitution of Zn by Mn. Based on the above studies, we aim to reveal the relationship between the structures and properties, and the charge and spin controlling mechanism in the diluted magnetic semiconductors. We will provide meaningful information for the searching for the diluted magnetic semiconductors with novel and excellent properties.

英文关键词： Diluted magnetic I-II-V semiconductor;Charge controlling;Spin controlling;Cs-corrected transmission electron microscope;Modulated structure