有源区内电场对GaN基绿光发光二极管内量子效率影响的研究

项目名称： 有源区内电场对GaN基绿光发光二极管内量子效率影响的研究

项目编号： No.61334001

项目类型： 重点项目

立项/批准年度： 2014

项目学科： 无线电电子学、电信技术

项目作者： 刘军林

作者单位： 南昌大学

项目金额： 260万元

中文摘要： GaN基绿光LED的引入将进一步提升LED照明的色温、显色性等色品质，然而进一步提高其效率是前提。在影响GaN基绿光LED效率的因素中，效率衰退效应(Droop效应)是最主要的一个。本项目以硅衬底GaN基绿光LED为平台，从有源区内电场对内量子效率的影响入手，以期搞清抑制Droop效应、提升内量子效率的方法。研究内容: (1)有源区内电场的表征及与内量子效率间的关系；(2)减小量子阱内压电极化电场及增大pn结自建电场的材料生长与器件设计方法；(3)利用泄漏电子发光的LED新结构及所需技术。研究目标：(1)建立评估GaN基LED量子阱内电场大小的方法；(2)建立调控量子阱内电场的器件结构和生长方法；(3)搞清Mg记忆效应的机理及消除方法；(4)获得内量子效率大于60%，光输出功率大于360mw (350mA, 35A/cm2, 520nm) 的GaN基绿光LED。

中文关键词： 氮化镓;发光二极管;内量子效率;量子阱;内电场

英文摘要： The availability of high efficiency GaN based green LEDs will further enhance the performance of LED in general lighting field for improving color quality such as color temperature and color rendering index. At present, the efficiencies of GaN based green LEDs are not so high, the “Droop” effect is the main reason which affects the efficiency of GaN based green LEDs. This project will base on the research of Si substrate GaN based green LED, aim to find methods of restraining Droop effect and enhance internal quantum efficiency (IQE) by investigating the influence of internal electric field in active region on IQE. The project will study on: (1) characterization of internal electric field in active region and its influence on IQE; (2) device structure design and material growth methods to decrease piezoelectric field and increase pn junction build-in field in active region; (3) new structure and technology of using leakage carrier to emitting light. The objects include: (1) establish a method to evaluate the magnitude of internal electric field in the quantum wells of GaN based LEDs; (2) choose proper device structure and material growth method to adjust the intensity of internal electric field in quantum wells; (3) understand the mechanism of Mg memory effect and find out methods to eliminate it; (4) obtain GaN based green LEDs with IQE higher than 60% and light output power greater than 360mW (@350mA, 35A/cm2, 520nm).

英文关键词： GaN;LED;internal quantum efficiency;quantum well;internal electric field