低损伤量子阱内混法制备多波长、低阈值集成式高亮度半导体激光器的研究

项目名称： 低损伤量子阱内混法制备多波长、低阈值集成式高亮度半导体激光器的研究

项目编号： No.61308051

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 无线电电子学、电信技术

项目作者： 乔忠良

作者单位： 长春理工大学

项目金额： 26万元

中文摘要： 针对GaAs基衬底片上的多光路集成应用，改进或消除传统高温量子阱内混技术带来的对多光路集成外延片有源区的损伤问题。本项目拟在激光器外延结构的P型区内引入碳原子掺杂，同时引入非对称大光腔宽波导，降低和限制激光器外延片外延结构中掺杂原子在量子阱内混过程中扩散进外延片的有源区；在激光器外延片P面上用不同种方法沉积不同特性的薄膜材料，通过退火过程中降温工艺参数控制，实现对量子阱区应力的控制及波导区复合中心分布的有效限制，从而实现外延片各层结构退火后的低损伤甚至无损伤，并以此实现量子阱区光荧光谱的大的可控蓝移；利用低损伤量子内混工艺实现集成的多光路激光器，得到三个波长以上、低阈值电流、带隙可控的InGaAs/GaAs系材料光集成式高亮度半导体激光器。以上的技术手段也可用于其他材料体系中其他波段的多波长、低阈值电流、带隙可控的光路集成的高亮度半导体激光器或多波长探测器等器件的制备。

中文关键词： 半导体激光器；量子阱内混；阈值电流；多波长；高亮度

英文摘要： this project is to achieve multi-optical path on the LD wafer of GaAs-baseed and to improve or eliminate injury of quantum well intermixing at high temperature。carbon atoms are introduced in the P-type epitaxial doping layers of semiconductor laser ,using the asymmetric wide waveguide of semiconductor laser in epitaxial wafer to limit the doped atoms into active region;to control the stress of active region, different kind of coating materials, which are deposited on the P surface of the epitaxial wafer using different kinds of deposition methods that are controlled by a special annealed process parameters,the cooling stage of which is controlled precisely,all that are to achieve the low epitaxial layers damage or no damage, which is able to achieve the maximum blue shift of quantum well spectrum;using the above technology that can form three-wavelengths and get low threshold current and high brightness integrated semiconductor lasers that are InGaAs/GaAs based material bandgap. The designed device structure and fabrication process of above that can also be used in other material systems and three-wavelength , low threshold current and a gap controlled multi-optical path integrated semiconductor laser of high brightness and multi-wavelength detector.

英文关键词： semiconductor laser；quantum well intermixing；threshold current；multi-wavelength；high brightness