ZnS@ZnO/有机纳米复合结构紫外探测器的构筑与性能研究

项目名称： ZnS@ZnO/有机纳米复合结构紫外探测器的构筑与性能研究

项目编号： No.61504048

项目类型： 青年科学基金项目

立项/批准年度： 2016

项目学科： 无线电电子学、电信技术

项目作者： 丁梦

作者单位： 济南大学

项目金额： 20万元

中文摘要： 紫外探测技术在国防和民用方面的重要性使其成为当今的一个重要研究课题。目前影响ZnO纳米结构紫外探测器使用的关键问题是：对紫外光的吸收效率小使响应度较低、电子渡越路径较短使并联电阻值较小导致暗电流较高。为此，本项目提出利用以ZnS@ZnO纳米核壳结构及有机物聚乙烯咔唑（PVK）混合物作为光吸收活性区，来提高紫外光的吸收效率及光生载流子的有效分离效率，研究纳米复合物的尺寸、无机有机物的混合比对探测器响应度的影响和物理机制；以有机物空穴阻挡层（BCP）、空穴传输（PEDOT：PSS）、电子阻挡层（TPD-Si2）等无机材料为载流子限制层构筑垂直结构的紫外光电探测器来降低暗电流，研究载流子限制层、界面处电荷注入对该结构的紫外探测器的电学和光谱响应特性的影响，探寻降低暗电流和提高响应度的方法和技术。通过优化器件结构及制备方法和技术，制备一种高效、高灵敏度和低成本的紫外光探测器。

中文关键词： 半导体光电探测器；光谱响应；紫外光电探测器；暗电流

英文摘要： Ultraviolet (UV) detection has been one of most important research topics in the detection technology due to its importance and universality in the military and civilian field. However, the critical problem to affect the practical utilization of ZnO nanostructure based UV detector is the slow response due to low UV absorption efficiency and high dark current due to the low parallel resistance induced by short electronic transit route. Therefore, this project proposes that: the responsivity and its physical mechanism influenced by the nanocomposite size and the hybrid ratio of inorganic to organic matters could be studied by using the composite of ZnS@ZnO core-shell nanostructure and polyvinyl carbazole (PVK) as light absorption active zone to improve the efficiency of UV absorption and effective separation of photon-generated carriers; the low dark current of UV photoelectronic detector is achieved by constructing vertical structure using organic hole blocking layer (BCP), hole transport (PEDOT: PSS) and electron blocking layer (TPD-Si2) as carrier confinement layer, and studies the influence of carrier confinement layer and interface charge injection on the electrology and spectral response characteristic of UV detector in order to explore the methods and techniques to reduce the dark current and enhance resposivity. Finally, a kind of high efficiency, high sensitivity and low cost UV detector device could be fabricated by optimizing the detector structure and fabrication method and technique.

英文关键词： semiconductor photoelectric detector;photoresponse;Ultraviolet detector;dark current