铜基镶嵌结构界面金刚石涂层及其界面热阻的研究

项目名称： 铜基镶嵌结构界面金刚石涂层及其界面热阻的研究

项目编号： No.51271079

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 一般工业技术

项目作者： 邱万奇

作者单位： 华南理工大学

项目金额： 80万元

中文摘要： 在铜基体表面电镀含微量Cr的Cu-Diamond复合镶嵌层，确保金刚石颗粒大部分埋入过渡层中（镶嵌），少部分露出过渡层（露头），以露头为籽晶，在CVD系统中同质外延生长出基于热沉应用的镶嵌结构界面金刚石涂层。电镀Cu与基体Cu界面因高温CVD时Cu原子间的互扩散而消失，Cu/Diamond界面因微量掺Cr而得到强化，Cu/Diamond界面因镶嵌咬合而增大接触面积，这些措施都使界面热阻降低。分别对Cu/Cr3C2,Cr3C2/Diamond和Cu/Cr3C2/Diamond的界面结构和界面热阻进行研究，判断各界面主要热载子耦合方式，并研究Cr3C2厚度在声子平均自由程范围内时对界面热阻的影响。项目致力于探索降低界面热阻的方法，揭示界面热阻的本质，提出预测Cu/Cr3C2/Diamond界面热阻的物理模型,为铜基镶嵌结构界面金刚石涂层热沉和Cu-Diamond复合热沉设计提供理论指导。

中文关键词： 金刚石；涂层；电镀；界面热阻；镶嵌结构

英文摘要： The inlay structure diamond coatings on Cu will be deposited by two steps. The first step comprises the deposition with a electric plating Cu-diamond composite inlay interlayer with a tiny amount of chromium. The diamond particles on inlay interlayer need partially imbed in Cu layer (inlay part) and the remains protrude out of surface (protrude part).In the second step, a continuous diamond coatings which can be used for heat sink application in micro-chips will be deposited by homoepitaxial growth on diamond seeds of protruding out of interlayer with chemical vapor deposition (CVD) method.The thermal boundary resistance of inlay structure diamond coatings on copper substrate can be sufficiently reduced by the co-diffusion of Cu atoms which results of vanishing of the interface between plating Cu and substrate Cu, strengthening the diamond/Cu interface by the inserted layer of Cr3C2 and the enlarged the contact area of inlay structure interface. The interfacial structure and thermal boundary resistance of Cu/Cr3C2, Cr3C2/Diamond and Cu/Cr3C2/Diamond will be studied to determine the coupling mode of thermal transmission particles, ie, electron and phonon.The influence of reducing the Cr3C2 thickness to phonon mean free path scale on thermal boundary resistance will also be investigated for a special increase of

英文关键词： diamond；coatings；plating；interfacial heat resistance；inlay structure