高损伤阈值半导体激光腔面介质膜制备与检测技术研究

项目名称： 高损伤阈值半导体激光腔面介质膜制备与检测技术研究

项目编号： No.61474117

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 无线电电子学、电信技术

项目作者： 张金龙

作者单位： 中国科学院长春光学精密机械与物理研究所

项目金额： 80万元

中文摘要： 高输出功率和长期可靠性是大功率半导体激光器得以广泛应用的前提，而腔面灾变性光学损伤阈值一直是限制其最大输出功率和可靠性的重要因素。本项目采用SEM+CL和EPR技术对激光器腔面的缺陷和表面态进行研究，并采用等离子表面处理技术去除腔面表面态，再在腔面制作激光的非吸收窗口。采用离子辅助镀膜技术控制介质膜的元素比、杂质与缺陷的密度、应力模式与水平，再利用SEM、SIMS、EPR、XRD等方法对薄膜的微观结构和特性进行表征。在此基础上利用SPTS激光热吸收测试技术与在线显微图像实时监视法对薄膜与激光相互作用的物理过程及薄膜损伤的瞬态行为进行研究，探索薄膜损伤的机理及动力学过程。 通过以上研究掌握薄膜激光损伤与薄膜特性的内在联系，改进薄膜制备工艺及方法，研制出损伤阈值高于5MW/cm2、反射率大于99.9%的介质膜，研制出915nm准连续输出10W的单管芯片和808nm连续输出60W的激光Bar条。

中文关键词： 半导体激光器；腔面介质薄膜；灾变性光学损伤；等离子表面处理技术；非吸收窗口

英文摘要： The reason of the widely used is the high output power and long term reliability of high power semiconductor lasers, and the facet catastrophic optical damage(COD) has been the key factor of the output power and reliability of lasers. By the technology of Electron paramagnetic resonance(EPR), Scanning electron microscope(SEM) and Cathodoluminescence(CL), the defects and surface states on the lasers facets was investigated. And by plasma surface treatment technology the surface states on the lasers facets was removed. Then non-absorption window was fabricated on the lasers facets. By plasma ion assisted deposition technique the elements of the dielectric film, the density of impurities and defects, the stress model and levels were controled. By SEM, SIMS, EPR, XRD and other methods the microstructure and properties of films were characterized. Based on this test by SPTS laser heat absorption test technology and online real-time monitoring method of the microscopic image, the mechanism of film and laser interaction and the transient behavior of film damage was investigated. The mechanism and kinetics of film damage was explored. Through the above study and the internal relations of film properties and the facet catastrophic optical damage and the damage principle of dielectric film on the lasers facet were mastered. By improved technology and methods of film preparation, developing the COD of the lasers facet is higher than 5 MW/cm2 and reflectance of the dielectric film is more than 99.9%. The 915nm single bar of quasi-continuous output 10W and 808nm laser bar of continuous output 60W were developed.

英文关键词： Semiconductor laser;Facet coating;Catastrophic optical damage;Plasma surface treatment technology;Non-absorption window