反赫斯勒化合物基亚铁磁性半导体的设计、合成及性能

项目名称： 反赫斯勒化合物基亚铁磁性半导体的设计、合成及性能

项目编号： No.11304290

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 数理科学和化学

项目作者： 冯武威

作者单位： 中国地质大学（北京）

项目金额： 27万元

中文摘要： 实现自旋转移力矩磁阻随机存储器等下一代信息存储和逻辑器件的关键是获得兼具高自旋极化和高自旋注入效率的自旋电子材料。本项目针对赫斯勒化合物通过元素占位、替代和原子有序度变化可实现不同能带结构的特点，采用离子束溅射等薄膜沉积手段制备兼具半金属铁磁体和半导体能带结构的新型反赫斯勒结构亚铁磁性半导体薄膜；根据赫斯勒化合物和闪锌矿型半导体的结构相容性，用反赫斯勒结构半金属亚铁磁体和稀磁半导体合成人工亚铁磁性半导体复合材料；探讨该类新型化合物能带结构调制以及半金属亚铁磁体和稀磁半导体相互作用的方法和机理。项目预期将获得具有高居里温度和自旋极化、高自旋注入效率、低净磁矩的反赫斯勒化合物基亚铁磁性半导体材料的薄膜沉积工艺并确立能带调制机理。研究成果可为下一代自旋电子器件的设计和操控提供新的思路和科学依据。

中文关键词： 赫斯勒结构化合物；半金属铁磁体；稀磁半导体；自零禁带半导体；自旋电子材料

英文摘要： The next-generation memory and logic devices, such as spin-transfer torque magnetoresistive random access memory (STT-MRAM), make progress towards significant downscaling of the devices dimensions, ultrafast read and write speed, and greatly reduced power consumption, which expects excellent spintronics materials possessing both high spin polarization and high spin injection efficiency simultaneously. So far, no material can be a perfect candidate. Taking advantage of the characteristic of heusler compounds that the displacement(or replacement) of elements and the change of degree of chemical order lead to their diversified band structure and properties, this project is going to prepare inverse heusler structured ferrimagnetic semiconductor thin film materials with band structure lying between half metallic ferromagnet and semiconductor using ion beam sputtering film deposition technique. In addition, synthetic ferrimagnetic semiconducting composite materials composed of inverse heusler structured half metallic ferrimagnet/diluted magnetic semiconductor multilayered stacks are also fabricated based on the structure compatibility between heusler compounds and zinc-blende semiconductor. Meanwhile, methods and mechanism are also studied for understanding the modulation of band structure of these materials and the i

英文关键词： heusler alloy；half-metallic ferromagnet；diluted magnetic semiconductor；spin gapless semiconductor；spintronics materials