基于能带补偿的纳米硅/晶硅异质结电池的界面修饰与调控

项目名称： 基于能带补偿的纳米硅/晶硅异质结电池的界面修饰与调控

项目编号： No.51472096

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 一般工业技术

项目作者： 曾祥斌

作者单位： 华中科技大学

项目金额： 79万元

中文摘要： 纳米硅/晶硅异质结电池是新型高效低成本电池的首选结构之一，其相对于非晶/晶硅异质结具有更优良的电学特性，该异质结的界面缺陷是导致光生少子的复合几率增加，器件转化效率降低的关键因素。因此，迫切需要深入研究异质结界面状态、缺陷起源与分布及载流子输运规律，探索异质结界面缺陷修饰和调控技术来钝化界面缺陷态。本项目创新性地通过纳米硅薄膜的带隙调控实现对纳米硅/晶硅异质结进行界面缺陷修饰与能带失配调控；研究透明电极功函数对发射层表面的载流子传输性能的影响，对透明电极功函数进行调控，实现透明电极与发射层的有效接触，增加光生载流子收集效率。利用界面修饰技术实现高效纳米硅/晶硅异质结太阳电池的制备。研究界面光生载流子的分离、传输和收集机理。探索界面载流子复合的起源，获得载流子输运的调控机制，进一步提高纳米硅/晶硅异质器件效率。对其他半导体异质结器件界面的分析与调控也具有借鉴意义。

中文关键词： 纳米薄膜；异质结；界面修饰与调控；转换效率；太阳能电池

英文摘要： Nanocrystalline silicon (nc-Si)/crystalline silicon(c-Si) heterojunction solar cells is one of the preferred structures of high efficiency and low-cost. Compared to amorphous silicon (a-Si)/c-Si heterojunction, nc-Si/c-Si heterojunction posses better electrical properties. However, many kinds of defects around the interface results in the increase of photo-generated carrier recombination rate and the reduction of conversion efficiency. Therefore, it is urgent for in-depth analysis of the heterojunction interface states and carrier transport rules. Exploring the technology about modification and regulation of the heterojunction interface defects to passivate the interface defect states is very important. The project introduced innovatively nc-Si with adjustable band gap to decorate the interface of nc-Si/c-Si heterojunction and to solve the matter of band mismatch. We investigate the effect of the work function of transparent electrode on the transportation of carrier in the surface of the emitter layer. Effective contact between the transparent electrode and the emission layer can be obtained by regulation of the work function of the transparent electrode, so as to increase collection efficiency of photo-generated carrier. Mechanisms of effectively separation, transport and collection of photo-generated carrier around the interface will be illustrated. The origin of carrier recombination interface and the access of regulation mechanism of carrier transport will be explored to further improve efficiency of nc-Si/c-Si heterojunction devices. These will lay a good foundation for the analysis and regulation of the interfaces of other semiconductor heterojunction devices.

英文关键词： nc-Si thin film;heterojunction;modification and regulation of interface;conversion efficiency;solar cell