基于多种添加剂协同与竞争吸附作用的TSV镀铜工艺仿真及实验验证

项目名称： 基于多种添加剂协同与竞争吸附作用的TSV镀铜工艺仿真及实验验证

项目编号： No.61274104

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 无线电电子学、电信技术

项目作者： 高立明

作者单位： 上海交通大学

项目金额： 70万元

中文摘要： 随着半导体晶体管的尺寸接近纳米量级的今天，仅仅依靠缩小CMOS特征尺寸会逐渐逼近材料的物理极限，而三维封装技术被认为是最有希望实现"More than Moore"的新技术之一。在这其中，TSV（Through Silicon Via）技术是通过在芯片和芯片之间制作垂直互连，实现三维封装的最新技术。形成基于TSV结构（孔深可达150μm、深宽比可达10）、工艺参数、温度、表面特性、添加剂成份及浓度配比的TSV镀铜工艺仿真是实现TSV无缺陷填充的关键途径。本项目通过研究反应离子在TSV孔内的输运和扩散机理，重点针对成份及浓度配比各异的加速剂、抑制剂和整平剂在TSV孔内的协同作用与界面竞争吸附机理进行研究，并着重研究综合电场、流场、温度、电化学动力学及添加剂表面吸附理论的TSV铜填充工艺仿真与预测方法，从而为形成不同TSV结构的填充工艺优化和开发新型TSV镀液及添加剂提供理论基础和技术支撑。

中文关键词： TSV铜互连；数值模型；动力学解析；协同作用；系统性模型

英文摘要： While the sizes of semiconductor transistors approach the nano-scale at this moment, rely solely on reducing the size of CMOS characteristics is gradually approaching the physical limits of the material. So, three-dimensional (3D) packaging technology is considered as one of the most promising technologies to achieve "More than Moore". In which, TSV (Through Silicon Via) technologies, by making vertical interconnect between chips and chips, have become the latest technology of 3D packaging. TSV copper plating process simulation is the critical path to achieve optimal TSV formation. Formation of defect-free fill is based on the TSV structure (via depth of up to 150μm, the aspect ratio of up to 10), process parameters, temperature, surface properties, composition and the concentration ratio of the additives. Through studying of reactive ion transport and diffusion mechanism in TSV via, this project will focus on the synergy and interface competitive adsorption mechanism among different accelerators, inhibitors and leveling with different composition and concentration ratio. We will focus on the TSV copper filling process simulation and prediction methods, which integrated electric field, flow field, temperature, electrochemical kinetics, and surface adsorption theory of additives. For filling process optimization

英文关键词： TSV copper interconnect；Numerical model；Kinetics；Synergic effect；Systematic model