尺寸、温度、压强及其耦合对低维半导体的弹性和带隙的影响

项目名称： 尺寸、温度、压强及其耦合对低维半导体的弹性和带隙的影响

项目编号： No.11302089

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 数理科学和化学

项目作者： 李建伟

作者单位： 江苏师范大学

项目金额： 23万元

中文摘要： 低维半导体材料在它们的尺寸和形状以及外界温度、压强变化时显示出反常的光电力学性能，这些新奇的性能为新的技术和产业革命发展带来了契机，同时也对科学研究带来了挑战。研究这些新奇的光电力学性能的内在关联和控制因素是材料科学和凝聚态物理发展的必然，也是目前研究热点之一。本项目拟以低维GaN、SiC和AlN为研究对象，基于我们近期发展的键弛豫理论和局域键平均近似方法以及对ZnO的研究经验(，2012)，从材料的化学键的形成，断裂，振动和弛豫以及相应的能量和电子的量子钉扎、极化、局域化和致密化角度出发，从理论上探讨尺寸、温度、压强及其耦合引发它们的弹性和带隙变化的关键因素、内在物理机制以及变化规律的内在联系,发展和完善我们的键驰豫理论系统，从而为低维半导体的弹性和带隙的研究及器件的设计和组装提供理论基础。

中文关键词： 纳米半导体；弹性；禁带宽度；尺寸和温度及压强效应；

英文摘要： Low dimensional semiconductors exhibit novel photoelectric and mechanical properties with the changes of their size, shape, external temperature, and pressure. These novel properties bring the opportunity for new technology and industrial revolution, and also the challenge for scientific research. Studying the intrinsic relation and control factors of these novel photoelectric and mechanical behaviors is the necessity due to the development of the material science and condensed matter physics, and also the one of the hot topics. From the formation, break, relaxation, and vibration of the bonds of low dimensional GaN, SiC, and AlN and their corresponding quantum pinning, polarization, localization, densification of skin-depth energy and electrons, we plan to research the key factors,intrinsic mechanism,and intrinsic relation of changes of their elastic and band gap with the changes of size, temperature, pressure and their coupling base on developing the bond-order-length-strength (BOLS) correlation mechanism and the local bond average (LBA) approach and research experience on ZnO (< Chemical Review >, 2012). These works will develop and perfect our BOLS correlation mechanism system, and provide a theoretical basis for researching elasticity and band gap, and designing and assembling device of low dimensional semi

英文关键词： nano-semiconductors；elasticity；band gap；size; temperature and pressure effect；