As the CMOS technology enters nanometer scales, integrated circuits (ICs) become increasingly sensitive to radiation-induced soft errors, which can corrupt the state of storage elements and cause severe reliability issues. Many hardened designs have been proposed to mitigate soft errors by using filtering elements. However, existing filtering elements only protect their inputs against soft errors and leave their outputs unprotected. Therefore, additional filtering elements must be added to protect outputs, resulting in extra overhead. In this paper, we first propose a novel Output-Split C-element (OSC) to protect both its input and output nodes, and then a novel LOw-COst single-node-upset (SNU) self-resilient latch (LOCO) to use OSCs to achieve both soft error resilience and low overhead. The usage of OSCs effectively reduce the short-circuit current of the LOCO latch during switching activities. Furthermore, the usage of clock gating and high-speed path reduces power consumption and delay, respectively. Compared with state-of-the-art SNU-resilient hardened designs, the LOCO latch achieves 19% fewer transistors, 63.58% lower power, 74% less delay, and 92% lower power-delay-product (PDP) on average. In addition, the LOCO latch exhibits better stability under variations in PVT (Process, Voltage, and Temperature).
翻译:随着CMOS技术进入纳米尺度,集成电路对辐射引发的软错误日益敏感,这些错误可能破坏存储单元的状态并导致严重的可靠性问题。已有许多加固设计通过使用滤波元件来缓解软错误。然而,现有滤波元件仅保护其输入节点免受软错误影响,而输出节点则未受保护。因此,必须额外添加滤波元件以保护输出节点,导致额外的开销。本文首先提出一种新型输出分离C单元,用于同时保护其输入与输出节点;随后提出一种新型低成本单节点翻转自恢复锁存器,通过采用输出分离C单元实现软错误容错与低开销。输出分离C单元的使用有效降低了LOCO锁存器在切换过程中的短路电流。此外,时钟门控与高速路径的运用分别降低了功耗与延迟。与最先进的单节点翻转容错加固设计相比,LOCO锁存器平均减少19%的晶体管数量、降低63.58%的功耗、减少74%的延迟,并将功耗延迟积降低92%。同时,LOCO锁存器在工艺、电压与温度变化条件下表现出更优的稳定性。