While non-volatile memories (NVMs) provide several desirable characteristics like better density and comparable energy efficiency than DRAM, DRAM-like performance, and disk-like durability, the limited endurance NVMs manifest remains a challenge with these memories. Indeed, the endurance constraints of NVMs can prevent solutions that are commonly employed for other mainstream memories like DRAM from being carried over as-is to NVMs. Specifically, in this work we observe that, Oblivious RAM (ORAM) primitive, the state-ofart solution to tackle memory bus side channel vulnerability, while widely studied for DRAMs, is particularly challenging to implement as-is for NVMs as it severely affects endurance of NVMs. This is so, as the inherent nature of ORAM primitive causes an order of magnitude increase in write traffic and furthermore, causes some regions of memory to be written far more often than others. This non-uniform write traffic as manifested by ORAM primitive stands to severely affect the lifetime of non-volatile memories (1% of baseline without ORAM) to even make it impractical to address this security vulnerability
翻译:均等主义 ORAM:ORAM的磨损平衡策略
虽然非易失性内存(NVM)提供了更好的密度和可比的能源效率、与DRAM相似的性能和类似磁盘的耐久性等几个理想特性,但是NVM的有限耐久性仍然是这些内存的一个挑战。事实上,NVM的耐久性约束可以防止像DRAM这样的其他主流内存的常用解决方案被简单地迁移到NVM,原因在于这些解决方案与NVM的交互可能会严重影响NVM的耐久性。具体而言,在这项工作中,我们观察到,用于处理存储器总线侧信道漏洞的最先进的解决方案-ORAM原语,虽然在DRAM上被广泛研究,但在NVM上的直接实现是极具挑战性的,因为ORAM原语的固有特性会导致写入流量增加一个数量级,此外还会导致某些内存区域被写入得比其它区域频繁。正如ORAM原语所表现的非均等的写入流量,可能严重影响非易失性内存的生命周期(没有ORAM时的基准的1%),甚至可能使其在实践中变得不切实际,以解决这种安全漏洞。