We have developed a new magnetoelectric material based on Ga doped {\alpha}-Fe2O3 in rhombohedral phase. The material is a canted ferromagnet at room temperature and showing magneto-electric properties. The experimental results of electric field controlled magnetic state provided a direct evidence of room temperature magnetoelectric coupling in Ga doped {\alpha}-Fe2O3 system. Interestingly, (un-doped) {\alpha}-Fe2O3 system does not exhibit any electric field controlled magnetic exchange bias shift, but Ga doped {\alpha}-Fe2O3 system has shown an extremely high electric field induced magnetic exchange bias shift up to the value of 1120 Oe (positive). On the other hand, in a first time, we report the electric field controlled magnetic state switching both in {\alpha}-Fe2O3 and in Ga doped {\alpha}-Fe2O3 systems. The switching of magnetic state is highly sensitive to ON and OFF modes, as well as to the change of polarity of applied electric voltage during in-field magnetic relaxation experiments. The switching of magnetic state to upper level for positive electric field and to down level for negative electric field indicates that electric and magnetic orders are coupled in the Ga doped hematite system. Such material is of increasing demand in today for multifunctional applications in next generation magnetic sensor, switching, non-volatile memory and spintronic devices.
翻译:我们开发了一个新的磁电材料, 以Ga doped phalpha}- Fe2O3 系统为基础。 材料是室内温度时加固的铁磁网, 显示磁电特性。 电场控制的磁电状态实验结果提供了直接的证据, 显示Ga doped ~alpha}- Fe2O3 系统中室温磁电联结。 有趣的是, (未加涂改) phalpha}- Fe2O3 系统没有显示任何电场控制磁交换偏移, 但加加加固 pha}- Fe2O3 系统显示, 一个极高的电场引发的磁电磁交换偏移偏移偏移偏移, 直至1120 Oe( 阳性) 。 另一方面, 我们首次报告了电场控制磁电磁状态的转换, 在磁场期间, 磁磁层变换到磁磁场的电磁变异性水平, 磁场的磁变换到磁场, 磁场的电磁场的磁变换到磁场, 磁场, 变到磁场的磁场, 磁场的磁变到磁场的磁场的磁场, 磁场的电磁场, 磁场的电磁场的电磁场的电磁变到磁场的电磁场, 变到磁场的磁场的电磁场的电磁场的电磁场, 变,, 变的电变到的电磁场的磁变到磁场的电变到的电磁场的电压的电磁场的电磁场, 的电压的电磁场的电磁场的电压的电流变到磁场的磁场的电压的电压的电压的电压的电压的电压的电压的电压的电压的电压的电压的电压的电压的电压的电压的电压的电压的电压的电压的电压的电压的电压的电压的电压的电压的电压的电压的电压的电压的电压的电压的电压的电压的电压的电压的电压的电压的电压的电压的电压