Ultra-fast \& low-power superconductor single-flux-quantum (SFQ)-based CNN systolic accelerators are built to enhance the CNN inference throughput. However, shift-register (SHIFT)-based scratchpad memory (SPM) arrays prevent a SFQ CNN accelerator from exceeding 40\% of its peak throughput, due to the lack of random access capability. This paper first documents our study of a variety of cryogenic memory technologies, including Vortex Transition Memory (VTM), Josephson-CMOS SRAM, MRAM, and Superconducting Nanowire Memory, during which we found that none of the aforementioned technologies made a SFQ CNN accelerator achieve high throughput, small area, and low power simultaneously. Second, we present a heterogeneous SPM architecture, SMART, composed of SHIFT arrays and a random access array to improve the inference throughput of a SFQ CNN systolic accelerator. Third, we propose a fast, low-power and dense pipelined random access CMOS-SFQ array by building SFQ passive-transmission-line-based H-Trees that connect CMOS sub-banks. Finally, we create an ILP-based compiler to deploy CNN models on SMART. Experimental results show that, with the same chip area overhead, compared to the latest SHIFT-based SFQ CNN accelerator, SMART improves the inference throughput by $3.9\times$ ($2.2\times$), and reduces the inference energy by $86\%$ ($71\%$) when inferring a single image (a batch of images).
翻译:超快 低功率超级导体 单通量 超导器 单通量 (SFQ) 的低功率超级导体 CNN 的 Systec 加速器 的建立是为了加强CNN 的推导量。 然而,基于 STHF 的 换位发送器 抓盘 内存(SPM ) 的阵列使 SFQ CN 加速器由于缺乏随机访问能力,无法超过其峰值的40 ⁇ 。 本文首先记录了我们对各种低温存储技术的研究,包括Vortex 的 VTM, Josephson-CMOS 中值内存、MRAM 和超高导流中存储器内存。 在此期间,我们发现上述技术中没有任何一项SFNC 加速器(SHFF) (SM) (SM) (SM) (SM) (SM) (SL) (SL) (SL) (SD) (SD) (SL) (SL) (SL) (SD) (SD) (SD) (SD) (SD) (SD) (SD) (SD) (SD) (SD) (SD) (SD) (SD) (SD) (SD) (SD) (SD) (SD) (SD) (SD) (SD) (SD) (S) (SD) (SD) (SD) (SD) (SD) (SD) (SD) (SD) (SD) (SD) (SD) (SD) (S) (SD) (S) (S) (SD) (S) (S) (SD) (SD) (SD) (SD) (SD) (SD) (SD) (SD) (SD) (SD) (SD) (SD) (SD) (SD) (SD) (SD) (SD) (SD) (SD) (S) (S) (SD) (S) (S) (S) (SD) (SD) (SD)