GaN半导体纳米材料的多场耦合失效机理

项目名称： GaN半导体纳米材料的多场耦合失效机理

项目编号： No.51272158

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 一般工业技术

项目作者： 郑学军

作者单位： 湘潭大学

项目金额： 80万元

中文摘要： 半导体纳米材料具有优异的光电、压电和敏感特性，在纳米电子器件中具有很好的应用前景；缺乏可靠性评价方法严重限制了半导体纳米器件的开发应用，因而研究半导体纳米材料多场耦合失效行为具有重要意义。本项目选择具有极高化学稳定性、良好热稳定性和机械性能的GaN半导体纳米材料，及其纳米线、纳米带和纳米线垂直阵列原理性器件为研究对象，拟解决半导体纳米材料跨尺度模拟及多场耦合失效机理两个关键科学问题。发展实时观测外场下半导体纳米材料多场耦合行为的方法手段；建立原子、分子和连续介质层次模型，模拟半导体纳米材料多场耦合响应；将键弛豫相关理论扩展到不同物理场空间，描述宏观物理性能和原子键参数的解析函数关系；解耦半导体纳米材料压电势、应力场和缺陷之间的耦合问题；建立揭示半导体纳米材料多场耦合"结构失效"和"功能失效"机理,丰富半导体纳米材料力电失效学的基本内涵，为优化半导体纳米材料制备和应用提供理论基础。

中文关键词： 半导体纳米材料；带隙；跨尺度模拟；多场耦合失效；键驰豫理论

英文摘要： Semiconducting nanomaterials have the potential application in nanoelectronic devices because they have the excellent optoelectronic property, piezoelectric property and sensitivity characteristics. The application is greatly restricted by the lack of reliability evaluation on semiconducting nanoelectronic devices, therefore it is very important to understand multi-field coupling failure mechanisms of semiconducting nanomaterials.In this proposal, considering high chemical stability, good thermal stability and mechanical property we choose GaN nanowire, nanobelt and nanowire array as an object of study to solve two key scientific issues, the multi-scale modeling and multi-field coupling failure mechanism. We will develop some novel experimental methods to observe multi-field coupling failure under the external fields, and perform multi-scale modeling on semiconducting nanomaterials by constructing the atom, molecule and continuum models. Bond-order-length-strength (BOLS) theory is extended to describe the function relationship between the macroscopic physical properties and atomic bond parameters at different physical fields, and we will solve the multi-field coupling of the electric field, stress field and defects for semiconducting nanomaterials. A set of theoretical system will be constructed for structural a

英文关键词： Semiconducting nanomaterials；Band gap；Multi-scale modeling；Multi-field coupling failure；Bond-order-length-strength