砷化镓表面摩擦化学去除的机理及应用研究

项目名称： 砷化镓表面摩擦化学去除的机理及应用研究

项目编号： No.51305365

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 机械、仪表工业

项目作者： 余丙军

作者单位： 西南交通大学

项目金额： 25万元

中文摘要： 砷化镓表面所形成的量子点具有优异的光电特性，在新能源和光电探测等高新科技领域展示出强劲的应用前景。然而，量子点生长的无序性成为限制其性能提升的巨大障碍。定位构筑量子点的关键是加工出诱导量子点生长的低缺陷纳米级凹坑。目前，常规的纳米压痕和高能束刻蚀等方法易导致砷化镓衬底形成大量缺陷，难以满足量子点的生长要求。而摩擦化学方法可在低载下实现局部区域材料的去除，是在砷化镓衬底表面形成低缺陷纳米凹坑的有效途径。为此，本项目拟系统开展砷化镓摩擦化学去除的行为、机理及应用研究。在阐明各种因素对砷化镓摩擦化学去除的影响规律的基础上，深入探究材料去除过程中机械和化学的耦合作用，以揭示砷化镓的摩擦化学去除机制；最后，通过对实验工况的优化，实现砷化镓表面材料的低损伤可控去除。该研究不仅有助于丰富纳米摩擦学基础理论，而且有望实现砷化镓表面高质量量子点的定位生长，从而有力推动其在新能源等领域的实用化进程。

中文关键词： 纳米摩擦学；微磨损；摩擦化学去除；砷化镓；

英文摘要： Due to its excellent photoelectric property, gallium arsenide (GaAs) based quantum dots (QDs) have potential applications in new energy technologies, photoelectric detection, and so on. However, disorder growth of QDs becomes the great obstacle for further improving their performances. The key procedure for the site-controlled formation of QDs is to fabricate nanoscale holes with low defect to induce the nucleation of QDs. Lots of lattice defects were observed on the holes on GaAs realized by some traditional methods, such as nanoindentation and etching by high energy beam, which is unqualified for QDs generation. Material removal by tribochemical wear is a feasible approach to form the nucleation site with low defect lattice on GaAs. The proposed project is hereby focused on investigating the behaviors, mechanism and controlling of tribochemical removal of GaAs systematically. Firstly, the effect of various experimental conditions on the tribochemistry wear will be investigated respectively. Based on the analysis of coupling results of mechanical interaction and chemical reaction, the mechanism to understand the tribochemical removal of GaAs will be revealed. Finally, the controllable material removal of GaAs will be completed by optimizing the experimental parameters. The proposed project research is expected

英文关键词： Nanotribology；Microwear；Tribochemical removal；Gallium arsenide；