氧化石墨烯基二极管存储器及其存储机理的研究

项目名称： 氧化石墨烯基二极管存储器及其存储机理的研究

项目编号： No.61204095

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 信息四处

项目作者： 仪明东

作者单位： 南京邮电大学

项目金额： 31万元

中文摘要： 氧化石墨烯基二极管存储器具有结构简单、容量大、存取速度快、数据受保护程度高、绿色环保、可大面积制备且与柔性衬底相兼容等诸多优点，拥有良好的开发前景和应用价值。目前，氧化石墨烯基二极管存储器的研究在国际上刚刚起步，与传统存储器相比，主要存在着存储性能低且机理互相矛盾等问题，制约了其实际应用。为解决以上问题，本项目提出利用厚度较薄的高介电常数绝缘材料构建氧迁移通道，利用超声喷雾的技术制备高质量且厚度合适的氧化石墨烯薄膜，以此提高氧化石墨烯基二极管存储器的性能。同时通过观测不同厚度的氧化石墨烯薄膜在不同导电态下的内部微观结构的变化，并结合分析电极与氧化石墨烯薄膜之间的能级匹配和具体反应，研究氧化石墨烯基二极管存储器的存储机理，构建合理的存储机理模型。通过本项目的研究，可以使得碳基材料能够有效应用到存储器上，最终研制出全碳结构的二极管存储器，从而为研制下一代的存储器件提供技术储备。

中文关键词： 闪存；写一次读多次型；氧迁移通道；氧化还原反应；电荷缺陷

英文摘要： Memory devices based on graphene oxide (GO) diode have attracted attention as a promising next generation memory owing to simple structure, high density, fast switching, safety, green, large area, and flexibility. Compared to conventional memory devices, the research on the type of memory devices is still in an early state, and the application of the memory device based on GO diode is mainly restricted by their low memory performance, as well as their paradoxical working mechanism. To solve the problems above, we will improve the performance of the memory device by constructing an oxygen transport pathway with the kind of insulating materials with higher dielectric constant and thinner thickness and preparing higher quality and appropriate thickness GO films with ultrasonic spray pyrolysis technique. Meanwhile, we will investigate the working mechanism of the memory devices and construct a rational memory model by surveying the change of the inner microscopic structure of GO films with various thickness films under different conduction state and analyzing the energy level match and the substantial reactions between the electrodes and GO films. Our research can make it possible that carbon-based materials can be applied on memory devices effectively, and eventually develops memory device based on all-carbon mater

英文关键词： Flash；write-once-read-many-times(WORM)；Oxgen transfer channel；Redox reaction；Charge traps