无损动态拉曼光谱技术在GaN器件可靠性中的应用研究

项目名称： 无损动态拉曼光谱技术在GaN器件可靠性中的应用研究

项目编号： No.61204086

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 信息四处

项目作者： 庞磊

作者单位： 中国科学院微电子研究所

项目金额： 24万元

中文摘要： GaN HEMT器件由于能够承受高的偏置电压，展现出出色的射频性能，但长期工作在高电压下而产生的可靠性问题限制了它们的广泛使用。如何设计可靠性试验并探寻相关参量的有效测量及表征手段，成为一个挑战。本项目选择加速电压步进应力试验作为研究GaN HEMT可靠性问题的切入点，多角度研究器件的临界退化电压；为了实时监控器件步进应力退化中的微观过程，有效表征晶体形变与器件可靠性的关系，将无损动态拉曼光谱测试技术与加速电压步进应力试验巧妙结合，从微观机制分析高场高压引发的晶体损伤，为逆极化效应等可靠性机理和器件失效机理分析提供一个直观的研究手段，可为可靠性加固奠定基础，从新角度改善AlGaN/GaN HEMTs材料及器件的可靠性问题。本项目的实施将推动GaN基材料及器件可靠性的理论研究与产品应用进一步向前发展，加快国内GaN基器件电路实用化的进程，以满足国家军事和民用通讯等领域的重大需求。

中文关键词： 拉曼光谱；步进应力；临界退化电压；可靠性；氮化镓高电子迁移率晶体管

英文摘要： GaN HEMTs display excellent RF performance because they can be biased under high voltage. However, the device reliability restricts their extensive use, which is caused by their long-time operation under high bias. Designing reliability experiment and exploring effective measurement and characterization approach of relevant parameters, come out to be a challenge. This project chooses accelerated voltage step-stress experiment as an entry point for GaN device reliability research, and studies critical voltage from different points of view. In order to monitor real-time micro-process in device step stress degeneration, and effectively characterize crystal deformation and device reliability, non-destructive dynamic Raman spectroscopy technology and accelerated voltage step-stress experiment are uniquely combined. Micro-mechanism analysis of high electrical field induced crystal damage, provides an intuitive means to analyze inverse piezoelectric effect, device failure mechanism and other reliability issues. The research will lay the foundation for the reliability reinforcement and improve reliability of GaN materials and devices. The implementation of this project will promote the theoretical research and product production to further development, speed up the application of domestic GaN-based devices and circuit

英文关键词： Raman spectroscopy；step stress；critical voltage；reliability；GaN HEMT