超低功耗氧化物阻变存储器的研制及其阻变机理的研究

项目名称： 超低功耗氧化物阻变存储器的研制及其阻变机理的研究

项目编号： No.61474039

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 无线电电子学、电信技术

项目作者： 叶葱

作者单位： 湖北大学

项目金额： 75万元

中文摘要： 获得超低功耗的阻变存储器（RRAM）对于实现CMOS集成电路中高密度非挥发性存储具有重要意义。本项目以获得低功耗RRAM器件为目标，从电极、阻变层和后处理工艺三方面展开研究。拟采用透明导电的氧化铟锡(ITO)作为活性电极来获得低操作电压，并探明RRAM新的阻变性能及其与ITO电极的关联；采用与CMOS工艺兼容的HfO2基材料为阻变层，通过掺杂和结构优化设计来降低操作电流，阐明阻变层掺杂和结构对RRAM阻变性能和功耗的影响规律；再辅以低温环保的 超临界流体技术来提升器件的存储性能和进一步降低功耗，探清该技术的最佳工艺条件和作用机理。由此，最终获得功耗低于1微瓦的氧化物RRAM原型器件；并揭示导电细丝形成及断裂与电极、阻变层和后处理工艺的内在联系，为阻变机理的研究提供实验依据。该项目的实施，不仅为构筑功耗低、存储性能优异的RRAM器件提供新思路，而且对完善细丝理论具有重要的科学意义。

中文关键词： 阻变存储器；低功耗；阻变机理；超临界流体

英文摘要： To realize the high-density non-vilatile memory applications in CMOS integrated circuits,the low-power Resistive random access memory (RRAM) devices will be of great importance.Targeted on obtaining the low-power RRAM, this project aims to reduce the power consumption from three aspects: the electrode,the resistive switching layer as well as the post treatment.In this proposal,transparent and conductive ITO electrode will be employed to lower the operation voltage and further explore the new resistive switching behavior and the correlation with the ITO electrode; CMOS compatable HfO2-based materials will be introduced as the switching layer and the operation current is expected to be reduced by applying doping or novel structures to the switching layer. The dependence of switching characteristics and the power consumption on the switching layer with doping or novel sructures will be revealed. In the following, envionmental-friendly supercritical fluid technology with the property of low temperature will be adopted to improve the performance and reduce the power as well. The condition and reason of improving the performance by supercritical fluid technology will be disclosed.Based on the above researches, we can finally obtain RRAM device with an operation power lower than 10-6 W.Meanwhile,the relationship between the formation/rupture of conductive filament with the electrode,the resistive switching layer as well as the post treatment will be disclosed in oder to provide the experimental evidences for the research of RRAM mechanism. The smooth implementation of this project will not only propose an innovative idea to fabricate novel RRAM with low-power and excellent performance but be meaningful in science for making the theory of conductive filament more comprehensive.

英文关键词： RRAM;low-power;resistive switching mechanism;supercritical fluid