金属/铁电薄膜/半导体结构铁电隧道结电输运性能的界面调控

项目名称： 金属/铁电薄膜/半导体结构铁电隧道结电输运性能的界面调控

项目编号： No.51502087

项目类型： 青年科学基金项目

立项/批准年度： 2016

项目学科： 一般工业技术

项目作者： 孙静

作者单位： 湖南工程学院

项目金额： 21万元

中文摘要： 铁电隧道结具有非破坏性读出、大电阻转换、低工作电压、超快数据访问、低能耗等优势，因而在非挥发阻性铁电存储方面具有极大的应用潜力。2013年新提出的一个被公认为非常有前途的非易失性结构—金属/铁电薄膜/半导体结构的铁电隧道结，为纳米电子学领域开创了巨大的机遇。本申请项目便以金属/铁电薄膜/半导体结构的铁电隧道结为研究对象，从实验和理论两个方面研究金属/铁电薄膜之间的界面死层以及铁电薄膜/半导体之间的界面层对铁电隧道结隧穿电致电阻和电流-电压特性的影响，即研究金属/铁电薄膜/半导体结构铁电隧道结的界面效应。揭示界面在铁电隧道结中的作用机理，得出通过界面调控，实现改善隧道结性能的方法与手段。本申请项目属于材料和器件的交叉领域，其深入研究对于纳米级非挥发阻性铁电存储器件的实际应用具有重要的意义。

中文关键词： 铁电隧道结；铁电薄膜；铁电性能；电畴；铁电存储器

英文摘要： Ferroelectric tunnel junctions have great potential in the application of non-volatile resistive memories with notable advantages: non-destructive readout, giant resistance switching, low operating power, ultra-fast data access and low power consumption. The metal/ferroelectric/semiconductor tunnel junction, proposed in 2013, is regarded as a promising non-volatile memory structure and provides tremendous opportunities for innovation in nanoelectronics. This project focuses on the experimental and theoretical study of metal/ferroelectric/semiconductor tunnel junctions, and observes the influences of the dead layer between the metal and the ferroelectric and the layer between the ferroelectric and the semiconductor on the tunneling electroresistance and the current-voltage characteristics, namely, the interface effect of the metal/ferroelectric/semiconductor tunnel junctions. It aims to reveal the mechanism of the interface in the ferroelectric tunnel junctions, and obtain the methods and means to improve the performance of the tunnel junctions by interface modulation. This project belongs to the cross areas of material and device, and its in-depth study will have great significance for the practical application of nanoscale nonvolatile resistive memories.

英文关键词： ferroelectric tunnel junction;ferroelectrc thin film;ferroelectric properties;domain;ferroelectric memory