氮化硅纳米线的可控掺杂、能带结构及其光致发光性能研究

项目名称： 氮化硅纳米线的可控掺杂、能带结构及其光致发光性能研究

项目编号： No.51472188

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 无机非金属材料学科

项目作者： 沈强

作者单位： 武汉理工大学

项目金额： 86万元

中文摘要： 氮化硅纳米线具备高比强、高比模、耐高温、抗氧化、抗辐射等特性，是一种典型的结构-功能一体化宽禁带半导体材料，通过能带结构可以调控其光致发光性能以满足不同光电应用要求。本项目致力于建立低温球磨、高温氮化制备氮化硅纳米线的制备新技术和尺度控制方法；根据元素周期表中不同价电子排布分区选取掺杂元素并控制掺杂含量，建立氮化硅纳米线可控掺杂技术；通过研究纳米晶化过程、氮化过程的物相组成和微观结构演变，揭示氮化硅纳米线的生长机理；结合氮化硅纳米线光致发光性能的测试与其能带结构的第一性原理计算，阐明氮化硅纳米线的能带结构，特别是缺陷能级、杂质能级、禁带宽度与光致发光性能之间的关联，揭示尺度、掺杂可控的氮化硅纳米线的光致发光机理，为氮化硅纳米线的发光性能调控与优化以及光电应用提供技术支撑和理论依据。

中文关键词： 氮化硅纳米线；掺杂；光致发光性能；能带结构

英文摘要： Silicon nitride (Si3N4) nanowires are one of the typical structural-functional integral broadband semiconductor materials, which have some superior properties, such as high strength, high modulus, high temperature resistance, oxidation resistance, radiation resistance, etc. Moreover, their photoluminescence properties could be controlled by changing the band structure in order to fulfill the requirements for electro-optic technology applications. The current project is going to explore the new processing technology and dimensionality control method for Si3N4 nanowires via nitriding the cryomilled high purity silicon powders; to establish the doping control methods for Si3N4 nanowires, with doping elements selected in the order of valence electron at different blocks in the periodic table; to reveal the growth mechanisms of Si3N4 nanowires by studying the phase compositions and microstructure evolution during the nanocrystalline and nitriding process; to clear the relationship between band structure (especially the imperfection level, doping level, bandgap) and photoluminescence properties, combining the photoluminescence properties test and calculation of the Si3N4 nanowires band structure by the first principle method; finally to reveal the photoluminescence mechanisms of the Si3N4 nanowires with controlled dimensionality and doping elements.The predicted achievements of the project will supply technical support and theoretical basis for control and optimization of photoluminescence properties of Si3N4 nanowires.

英文关键词： Silicon nitride nanowires;Doping;Photoluminescence;Luminescence mechanism