单轴应变硅MOSFET栅极漏电流及NBTI效应诱发的器件退化机制与模型研究

项目名称： 单轴应变硅MOSFET栅极漏电流及NBTI效应诱发的器件退化机制与模型研究

项目编号： No.61474042

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 无线电电子学、电信技术

项目作者： 李劲

作者单位： 湖南科技大学

项目金额： 78万元

中文摘要： 应变硅具有载流子迁移率高、带隙可调，并与硅的微电子技术兼容等优异特性，被认为是延续Moore定律最有潜力的新技术之一。本申请项目以单轴应变硅MOS器件为研究对象，针对它的栅极漏电流和负偏置温度不稳定性(negative bias temperature instability, NBTI)两大可靠性问题，提出单轴应变硅MOS器件的栅极漏电流和NBTI效应两大可靠性问题不是简单的材料问题，而是一个器件问题，即应力、应变、电场、界面态、栅极漏电流和阈值电压漂移等物理量之间的耦合问题。基于此，本项目从理论、仿真和实验三方面研究本项目针对应变硅MOS器件两大可靠性问题进行深入而系统研究：分别建立了MOS器件的栅极漏电流的多物理变量耦合模型和NBTI效应机理模型。为制造可靠单轴应变硅MOS器件提供理论和实验指导。

中文关键词： 单轴应变硅；栅极漏电流；NBTI效应

英文摘要： Strained-Si materials with its advantage of high-mobility, tunable bandgap and compatible technology with traditional silicon processing, Therefore, Strained-Si was considered the most promising new technology to continue Moore's Law. In the project，the uniaxial strained-Si MOSFET device was used as the object of study. Aiming at the gate leakage current and negative bias temperature instability two key reliabilities of the device, proposed these two key reliability problems are not result in 'material', but caused by 'device', i.e., the Coupling between physical problems such as stress, strain, electric field, Interface states, gate leakage current, the shift of threshold voltage. On the base of these, in this project, the two key reliabilities are studied systematically from theory, simulation and experiments. The gate leakage current model and NBTI effect mechanism model were established. Provide guidance to improve the theoretical and experimental for uniaxial strained-Si MOSFET device reliability.

英文关键词： uniaxially strained Si;Gate leakage current;Negative Bias Temperature Instability