NiO基p型非晶氧化物半导体材料及其薄膜晶体管的研究

项目名称： NiO基p型非晶氧化物半导体材料及其薄膜晶体管的研究

项目编号： No.61471126

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 无线电电子学、电信技术

项目作者： 张群

作者单位： 复旦大学

项目金额： 80万元

中文摘要： p型非晶氧化物半导体（AOS）材料成为OLED器件和基于氧化物半导体CMOS器件发展的瓶颈材料，p型氧化物半导体TFTs技术的缺乏严重限制了OLED器件和透明电子学的广泛和深入发展。开展p型NiO基AOS材料及其薄膜晶体管的研究，旨在深入理解p型载流子的局域化机理和输运特性，开发出具有高迁移率的p型AOS材料；深入研究p型AOS沟道层与介质层之间的作用机制，制备出具有优良接触特性的沟道层/介质层界面；研究环境对背沟道表面和TFTs的影响，及其钝化层的作用，研发出电学性能优良的p型AOS-TFTs器件，揭示影响p型AOS-TFTs器件的电学稳定性的因素和机制。因此，开展p型氧化物半导体沟道层材料及其TFTs器件的关键科学问题的研究，对提高我国在氧化物TFTs器件、新型OLED显示器件和氧化物CMOS关键电子器件方面的研究水平，以及推动我国显示技术和新型微电子技术等战略性产业发展具有重要意义。

中文关键词： p型氧化物半导体；氧化镍；沟道层；薄膜晶体管；磁控溅射

英文摘要： p-type amorphous oxide semiconductors (AOSs) have become the criticle materials for the OLED devices and oxide-semiconductor-based CMOS devices. The TFTs technology is now short of p-type AOS channel layer, which is strictly limit the wide and deep development of OLED devices and transparent electronics. This project is try to understand the location mechanism and transport properties of holes in AOS well, and developed the high mobility p-type AOS materials. To investigate the interact between the channel layer and dielectric layer, and prepare the interface with good contact characteristic. To discuss the influence of environment on the back channel surface and the TFTs performance, and the role of the buffer layer. To research and develop the p-type AOS-TFT devices with relatively good electrical properties, reveal the factors and mechanisms which will influence the electrical performance and stability of the TFTs. Therefore, study on the key scientific problems for novel p-type AOS channel layer and the TFT devices is very important to promote the research level on oxide-TFTs, new OLED devices and oxide-CMOS devices, as well as to stimulate the development for display technology and new microelectronics in China.

英文关键词： p-type oxide semiconductor;NiO;channel layer;thin film transistor;magnetron sputtering