甚长波InAs/GaSb Ⅱ 类超晶格探测器材料及其新型界面研究

项目名称： 甚长波InAs/GaSb Ⅱ 类超晶格探测器材料及其新型界面研究

项目编号： No.61307116

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 无线电电子学、电信技术

项目作者： 张艳华

作者单位： 中国科学院半导体研究所

项目金额： 26万元

中文摘要： InAs/GaSb超晶格具有Ⅱ型能带结构，其俄歇复合及遂穿电流可能被极大抑制，具有载流子寿命长、材料均匀性好等优点，特别是在长波和甚长波波段比传统探测器具有优势，是下一代优异红外探测器材料之一，在制导、夜视、天际红外信息获取、光通信、瓦斯监控、红外对抗等红外探测器与激光器领域具有重要应用。本项目拟使用分子束外延设备采用理论设计、材料生长、物性测试相结合的研究方法研究50%截止波长大于16微米的甚长波InAs/GaSb超晶格材料及其界面的设计与生长，采用新型AlInSb界面解决甚长波InSb界面InAs/GaSb超晶格应变大、暗电流大的问题。重点研究InAs/GaSb的结构设计、新型AlInSb界面的生长条件及其组分、厚度的控制，AlInSb界面对InAs/GaSb超晶格结构、光学、电学性能影响的机制等关键科学问题。研制出新型AlInSb界面甚长波InAs/GaSb超晶格红外探测器原型器件。

中文关键词： 红外探测器；二类超晶格；界面；分子束外延；

英文摘要： InAs/GaSb superlattice (SL) material has a type-Ⅱ energy band structure and the Auger recombination rate and the tunneling current of the materil can be greatly suppressed. The type-Ⅱ SL structure also exhibits a long carrier lifetime and a good material uniformity, especially in the long and very long wavelength ranges. Thus, InAs/GaSb SL structure is regarded as one of the emerging and most excellent infarred detection materials. It has important applications in the field of infrared detector and laser, optical communications, gas monitoring, night vision and other applications.This project intends to investigate the theoretical design, material growth, physical properties of very long wavelength InAs/GaSb type Ⅱ SL materials and interfaces by molecular beam epitaxy. We intends to use the new AlInSb related interfaces to solve the probelems of large strain and large dark current of the very long wavelength detectors using InSb interfaces. We will study the key scientific issues including the design of the SL structure, the design and the growth control of the AlInSb interfaces and how the interface structure and property influence the optical and the electrical properties of the SL structure. Finally, a prototype very long wavelength InAs/GaSb Type Ⅱ SL photodetector device with new type of AlInSb interfaces w

英文关键词： Photodetector；type-Ⅱ Superlattice；Interface；MBE；