基于无机金属配体Ag-X（[AgS]-和[AgSe]-）修饰纳米晶的合成技术及其光电性能研究

项目名称： 基于无机金属配体Ag-X（[AgS]-和[AgSe]-）修饰纳米晶的合成技术及其光电性能研究

项目编号： No.21201055

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 无机化学

项目作者： 申怀彬

作者单位： 河南大学

项目金额： 25万元

中文摘要： 近年来，人们通过液相合成的方法得到了各种尺寸、形貌、组成可控的无机纳米晶。由于这些材料所表现出的新奇的物理和化学性质，使其在光电器件方面有着巨大的潜在应用价值。传统的纳米晶合成和组装大都利用有机配体作为表面修饰剂来保持其稳定性，由于这些有机配体导电性能差使得粒子之间的电荷传输能力较低，大大阻碍了其在光电器件中的应用。研究发现，无机硫属配合物作为纳米晶配体同样具有稳定纳米颗粒的作用，并且可以大大提高粒子间的电荷传输能力。最近，我们利用一种 Sn 的硫属无机配合物在有机相中直接合成了具有组装结构的 Cu2S和Cu2-xSe纳米晶，这种新的无机配体不仅改善了Cu2S和Cu2-xSe的电学性质，而且对其组装行为也有着重要影响。本项目将基于此开展新型无机金属配体修饰的纳米晶的合成技术研究，该技术有望改善量子点组装结构在光电器件应用中的界面电荷传输性能，从而有效提其在光电器件应用上的性能表现。

中文关键词： 量子点；表面修饰；核壳结构；发光二极管；光电特性

英文摘要： The bottom-up chemical synthesis of various inorganic nanocrystals with well-designed size, shape, and composition has achieved great success over the past two decades. Because of their extraordinary physical and chemical properties, colloidal nanocrystals have many potential applications in light-emitting devices, photodetectors, solar cells, and other devices. However, the inherent long chain organic surface ligand capped on the nanocrystals resulted the poor interparticle electrical transport properties and make the practical applications doubtful. Very recently, molecular metal chalcogenide complexes (MCCs), such as [Sn2S6] and [Sn2Se6]4-, were found could serve as convenient inorganic ligands for colloidal nanocrystals. We have reported that inorganic Sn-X complex ([Sn2S6]4-，[Sn2Se6]4-) as MCC ligand could induce the formation of self-assembled Cu2S and Cu2-xSe nanoplates and their electrical transport properties were largely improved. The present project is proposed to design inorganic ligands to synthesize various colloidal nanocrystals. And such inorganic ligands are able to cross-link as-synthesized nanocrystals into ordered superstructures. This will address the electrical transport issues caused by traditional long chain organic ligans and make the inorganic ligand capped colloidal nanocrystals more p

英文关键词： Quantum Dots；Surface Modification；Core-Shell Structure；Lighting Emitting Diodes；Photo-Electric Properties