一维单晶/多晶复合结构的构筑及迁移率的调制研究

项目名称： 一维单晶/多晶复合结构的构筑及迁移率的调制研究

项目编号： No.U1304108

项目类型： 联合基金项目

立项/批准年度： 2014

项目学科： 数理科学和化学

项目作者： 闫海龙

作者单位： 信阳师范学院

项目金额： 30万元

中文摘要： 由于一维纳米结构大大降低了载流子的散射作用，使纳米线具有很高的载流子迁移率，纳米线基薄膜晶体管成为研究热点。但是，纳米线基TFT的制作工艺复杂，其应用尚且需要进一步的研究。本项目提出一种高效地制备纳米线基TFT的加工工艺，并提出通过氩离子束注入提高迁移率的研究思路。研究工作包含以下几方面：(1) 利用静电纺丝法制备单晶/多晶复合ZnO纳米线，通过提高纳米线的整齐性简化TFT的加工工艺。(2) 通过单晶纳米线的掺入提高有源层的迁移率，并系统地研究掺杂比例对迁移率的影响。(3) 结合对准光刻和离子束注入技术对ZnO纳米线进行分区域Ar离子注入，既降低了晶界势垒又大大缩短了沟道层的有效长度。(4) IGZO在促进柔性电子器件发展方面有重要的作用，我们选择IGZO作为源漏电极材料。

中文关键词： 静电纺丝法；迁移率；薄膜晶体管；掺杂改性；电极特性研究

英文摘要： The quasi-1D nanostructures may reduce carrier scattering to produce high electron mobility. Nanowire based TFT have been a hot topic. However, the fabrication process of nanowire based TFT has poor reproducibility and is still not practical for applications. In this project, an effective process of nanowires based TFT is carried out. It is first suggeated that, the mobility will be improved through injecting Ar ions. The main cotents are given as follows: (1) Crystal/polycrystalline composite structures will be deposited on the substrate by electrospinning method. The preparation of nanowire based TFT will be simplified through promoting the regularity . (2) With a high mobility, crystal nanowires will be doped in ZnO nanowires for the purpose of increasing its mobility. And the influence of doping concentration on the carrier mobility will be discussed. (3) Ar ions will be injected regionally in ZnO nanowires by ion beam implantation technique and lithography, which can reduce the effective channel length and lower the potential barrier. (4) Indium gallium zinc oxide (IGZO) is promising for the development of flexible electronics, which is used to fabricate the source and drain.

英文关键词： Electrospinning；Mobility；Thin film transistor；Doping modified；Research on electrode characteristic