氧化物半导体薄膜晶体管的模型及参数提取方法研究

项目名称： 氧化物半导体薄膜晶体管的模型及参数提取方法研究

项目编号： No.61274085

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 无线电电子学、电信技术

项目作者： 姚若河

作者单位： 华南理工大学

项目金额： 80万元

中文摘要： 随着氧化物半导体薄膜晶体管研究的深入和制备工艺的成熟，氧化物半导体薄膜晶体管器件逐渐推向应用。研究建立氧化物半导体薄膜晶体管的模型及给出相应的参数提取方法对氧化物半导体薄膜晶体管集成电路的设计及制造都具有重要的意义。通过研究载流子在氧化物中的电导机理，分析栅压和温度对载流子迁移率的影响；分析有源层的陷阱态密度，研究其空间电荷的分布；分析陷阱态密度对低频噪声的影响；对氧化物半导体薄膜晶体管器件的结构、参数与物理效应之间的关系进行表征；建立适用于电路仿真器的氧化物半导体薄膜晶体管器件的直流模型和交流模型；建立包括热效应的氧化物半导体薄膜晶体管器件性能退化模型；研究与模型相对应的器件参数提取方法；并通过对典型样品的实际测量数据对模型进行验证和优化。

中文关键词： 薄膜晶体管；建模；氧化物半导体；参数提取；

英文摘要： With the development of research and fabrication process in the oxide semiconductor thin-film transistors (TFTs), applications of oxide semiconductor TFTs gradually tend to be popularized. Therefore, theoretical investigations and descriptions on extraction methods can represent useful tools to improve manufacture techniques of integrated circuit (IC) based on oxide semiconductor TFTs. In this project, given the conduction mechanisms in oxide, defect states and gate voltage effect on mobility under different temperatures, as well as the distribution of space charges, models under dc and ac stress conditions that easy to implement circuit simulators have been proposed. Besides, low frequency noise dependence on defect states is also taken into account. The models illustrate the relation among the structure, device parameters and physical effect exhaustively. In addition, with the consideration of heating effect, a degradation model of oxide semiconductor TFTs is developed. Meanwhile, the corresponding technique for model parameter extraction is presented.

英文关键词： thin-film transistors；modeling；oxide semiconductor；parameter extraction；