肖特基源漏垂直沟道环栅硅纳米线场效应晶体管及衍生器件研究

项目名称： 肖特基源漏垂直沟道环栅硅纳米线场效应晶体管及衍生器件研究

项目编号： No.61474005

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 无线电电子学、电信技术

项目作者： 孙雷

作者单位： 北京大学

项目金额： 76万元

中文摘要： 在未来电子器件所可能采用的FET结构中，环栅结构(GAA)最受关注，同时研发难度也最大，具有肖特基源漏的GAA是一种非常有潜力的器件设计，目前已有水平沟道GAA器件的实验报道，但是垂直沟道肖特基源漏环栅器件(GAA-V)的实验解决方案仍未见突破。本课题提出以研发GAA-V为主线，提出面向可集成硅工艺的GAA-V解决方案，同时提出三种衍生结构包括：非对称Schottky源漏环栅结构(GAA-VA)，杂质分凝Schottky源漏环栅器件(GAA-VS)，垂直环栅隧穿晶体管(GAA-VT)。课题计划以研发GAA-V为牵引，研究内容涵盖研发GAA-VA，GAA-VS，GAA-VT三种新型垂直沟道GAA器件的总体方案设计。GAA-V可集成解决方案的提出，为相关领域的研究做出了前瞻性的工作，由GAA-V衍生出GAA-VA，GAA-VS，GAA-VT是全新的结构概念，类似的实验设计方案为首次提出。

中文关键词： 肖特基势垒；环栅；硅纳米线；垂直沟道

英文摘要： In recent years, gate-all-around transistors (GAA) have attracted muck attention among the possible applicable structures for the future nano-scale electron devices. GAA with vertical channel and Schottky source/drain (GAA-V) is studied for its best ability of gate modulation, highest integrated density, and compatibility with high-k/metal gate and Ge-based applications. In this proposal, the top-down solution of GAA-V fabrication has been proposed for the first time. Three other derivative structures, including GAA with vertical channel and asymmetric Schottky source/drain (GAA-VA), GAA with vertical channel and dopant segregation Schottky source/drain (GAA-VS), and steep-slope GAA tunneling transistor with vertical channel and dopant segregation Schottky source/drain (GAA-VT) have also been proposed and studied. According to the previous numerical studies, the better ability of leakage current immunization and steep sub-threshold slope can be expected with the three derivative structures. And the fabrication of the derivative structures can be feasibly achieved by integrated individual procedures in the fabrication processing for GAA-V. GAA-VA, GAA-VS and GAA-VT are novel design of nano-scale electron device structure, and the fabrication solutions for GAA-VA, GAA-VS and GAA-VT are proposed for the first time.

英文关键词： Schottky barrier;gate all around;silicon nanowire;vertical channel