多功能氧化物在硅衬底上集成的研究

项目名称： 多功能氧化物在硅衬底上集成的研究

项目编号： No.61274097

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 无线电电子学、电信技术

项目作者： 车静光

作者单位： 复旦大学

项目金额： 80万元

中文摘要： 传统电子学器件的微型化越来越困难，已快接近Si基技术极限，出路之一是利用电子另一内禀特性，自旋。从传统电子学转向自旋电子学，诱人的方案是将功能氧化物集成到Si衬底上。达到这一目标最关键的是实现高质量的氧化物/硅界面。然而，由于氧与Si只需哪怕最少的接触既可生成SiO2，这看起来几乎是一个不可逾越的障碍。 基于第一性原理计算，我们将寻找突破这一瓶颈的方法：我们将在通常认为很容易被氧化的Si表面，揭示当氧化物生长在Si衬底上时，O-Si作用通道与O到达Si表面时初始位置之间的关系，从中寻找阻塞O-Si作用通道的方法，并将据此提出如何实现高质量的氧化物/Si界面的建议。 如能完成本项目，我们相信，所得结果将为把氧化物高质量地生长在Si衬底上铺平道路，为把Si基技术拓展到自旋电子学器件夯实基础。

中文关键词： 氧化物；Si(001)；自旋电子学；拓扑绝缘体；

英文摘要： The miniaturization of conventional electronic devices has become increasingly difficult and is approaching the limits of silicon-based technology. One way to go beyond the conventional electronics is to use another intrinsic nature of electrons, spin. An intriguing route to transferring electronics to spintronics is to integrate multifunctional oxides on Si substrate. The most important key for achieving this aim is to realize high-quality oxide/silicon interface. However, since O can easily turn silicon into silicon dioxide even at the slightest contact, this seems to be a nearly insurmountable obstacle. Based on first principles calculations, we plan to find a way to overcome this issue: We will explore the dependence of the O-Si intercatoin channels on the sites of O incoming on the Si surface during the oxide growth on the Si substrate, which was conventionally believed to be easily oxidized, and find how the O-Si interaction channels can be really blocked. Based on these results, we will suggest how to realize the high-quality interface between oxides and silicon. If the project could be carried out, we believe that the obtained results will pave the way to integrate oxides on Si substrate for high-quality oxide/Si interface, and as such, our work will lay the foundation for emerging technology for spint

英文关键词： oxides；Si(001)；spintronics；topological insulator；