基于SiC衬底的"近自由态"外延石墨烯制备及电输运研究

项目名称： 基于SiC衬底的"近自由态"外延石墨烯制备及电输运研究

项目编号： No.61306006

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 无线电电子学、电信技术

项目作者： 蔚翠

作者单位： 中国电子科技集团公司第十三研究所

项目金额： 25万元

中文摘要： Si面SiC衬底上制备的单层或少层石墨烯是制备晶圆级石墨烯电子器件的理想选择。然而石墨烯与SiC间的界面（过渡层），在石墨烯中引入了重n型掺杂和强的载流子散射。本项目拟通过氢等原子插入石墨烯与SiC衬底间的界面，极大的减弱衬底对石墨烯的影响，制备"近自由态"石墨烯。研究原子插入石墨烯与衬底间界面的过程和机制，插入原子对外延石墨烯的掺杂机制和掺杂浓度控制，近自由态石墨烯的载流子输运，并通过图形化预处理等工艺制备横向石墨烯p-n结，开展石墨烯p-n结输运特性的研究。这些研究结果将为石墨烯的理论研究和实际应用提供帮助。

中文关键词： 石墨烯；碳化硅；界面；掺杂；输运

英文摘要： Monolayer and few layer epitaxial graphene grown on Si-terminated SiC substrate is promising scalable graphene technology for electronics. However, covalent bonds at the SiC-graphene interface (buffer layer) induce strong n-doping of the graphene and scatter the charge carriers. This project will prepare quasi-free standing epitaxial graphene by atoms intercalation (H/Ge/Si/Au) into the interface of epitaxial graphene and the SiC substrates, in which the influence of SiC substrates on the epitaxial graphene will be weakened dramatically. We will investigate the process and mechanism of atoms intercalation, doping mechanism and doping concentration control of the intercalated atoms to the epitaxial graphene, and carrier transportation in the as-prepared quasi-free standing epitaxial graphene. By pretreatment (patterned graphene), lateral p-n junctions will be formed in graphene. The properties of graphene p-n junctions will be studied. The results should be helpful for the physical research and application of graphene.

英文关键词： graphene；SiC；interface；doping；transport