项目名称: CMOS兼容增强型MIS-AlGaN/GaN HEMTs器件及其栅极可靠性的研究
项目编号: No.51307150
项目类型: 青年科学基金项目
立项/批准年度: 2014
项目学科: 电工技术
项目作者: 谢刚
作者单位: 浙江大学
项目金额: 25万元
中文摘要: AlGaN/GaN 高迁移率晶体管(HEMTs)存在天然的二维电子气沟道(2-DEG),作为电力电子器件具有优秀的导通和开关特性。然而,其栅极常通型的特点不适合大部分系统应用需求。如何实现栅极高性能、高可靠性和工艺兼容性好的增强型AlGaN/GaN HEMTs是学者们所关心的问题。本项目旨在探索利用CMOS兼容的热氧化法实现增强型MIS-AlGaN/GaN HEMTs。该技术通过在不高于900℃的温度下,对栅极进行局部热氧化,实现阈值电压高于1.5V的增强型MIS-AlGaN/GaN HEMTs。本项目还基于所制造器件进行栅极和漏极高压反偏应力测试对阈值电压和栅极泄漏电流的行为进行研究。本项目是在已有的制造增强型器件工艺基础上(凹栅、P-GaN栅极等)的一个全新探索,其特点是利用一步热氧化工艺不仅制造出增强型HEMT,而且实现MIS结构抑制栅极泄漏电流,并与现有CMOS工艺相兼容。
中文关键词: AlGaN/GaN高迁移率晶体管;栅极局部热氧化;栅极湿法腐蚀;增强型;可靠性
英文摘要: AlGaN/GaN High Mobility Transistors(HEMTs)has the natural channel of the two-dimensional electron gas (2-DEG).As a power device,it features excellent forward and switching characteristics. However,its normally-on behavior is difficult to meet the requirements of the existing drive system.To realize the normally-off HEMTs with high gate performance,high reliability and good process compatibality is our concern.This project is to realize of E-mode MIS AlGaN/GaN HEMTs(Vth > 1.5V)with CMOS compatibale localized gate thermal oxidation below 900℃.Based on the fabricated devices, the gate behavior under high reverse biase will also be studied to evaluate the deviece reliability.This project is a brand-new exploration in the existing manufacturing process on the basis of the E-mode device. Further more, through one-step CMOS compatible thermal oxidation can not only realize the E-mode HEMTs,but also can realize the MIS structure to suppress the gate leakage current.At the same time,new ideas and solutions can be provided through the basis of the proposed project.
英文关键词: AlGaN/GaN HEMT;Localized gate thermal oxidation;gate wet etch;enhancement mode;reliability