原子尺度下石墨烯晶体管源漏接触电阻的调控机理研究

项目名称： 原子尺度下石墨烯晶体管源漏接触电阻的调控机理研究

项目编号： No.11504111

项目类型： 青年科学基金项目

立项/批准年度： 2016

项目学科： 数理科学和化学

项目作者： 吴幸

作者单位： 华东师范大学

项目金额： 24万元

中文摘要： 理想的石墨烯具有超高的载流子迁移率，有望替代硅作为晶体管沟道材料，但源漏电极与石墨烯的接触电阻高是目前限制其应用的重要因素之一。本项目拟利用高分辨原位透射电子显微技术对器件施加外场（电场或热场）并动态监测器件电学性能，研究石墨烯晶体管源漏接触电阻调控的基础科学问题。通过探索金属/石墨烯界面在直流、脉冲等电负载下的结构和电学行为演化规律，研究电极材料、制备工艺、后处理工艺等对金属/石墨烯界面特性的影响，分析金属/石墨烯界面结构、晶相、缺陷、化学成分等对石墨烯晶体管电学性能的调控机制，研究降低石墨烯晶体管源漏接触电阻的关键条件。本项目旨在揭示石墨烯晶体管源漏电阻的影响因素，阐明金属/石墨烯界面对器件电学性能的调控机制，为研发高速以及高可靠性石墨烯晶体管提供指导依据。

中文关键词： 晶体管；接触电阻；石墨烯；动态监测；电子显微学

英文摘要： Graphene’s high intrinsic carrier mobility has drawn much attention. However, the high contact resistance between the source/drain and graphene limits the application of high-speed graphene-based transistors. The objective of this project is to understand the fundamental role played by the metal/graphene interface in device electrical performance by using in-situ high resolution transmission electron microscope (TEM). This project aims: explore the electrical performance of the graphene transistor under electric loadings (DC and AC) as well as the electrical field induced structure/composition evolution of the metal/graphene interface; manipulate the metal/graphene interface nanostructure with various metal materials, fabrication processes and post annealing processes; study the transistor’s electrical performance tuned by metal/graphene interface nanostructure, crystal phase, defects or chemical components; understand the key parameters to achieve low source/drain contact resistance. This dynamic study of graphene-based transistor at atomic scale provides the fundamental understanding of the electrical transport mechanism at the source/drain electrodes and graphene interface, and paves a way for the investigations into improving the stability and scalability of graphene-based transistor for future high-speed nanoelectronics.

英文关键词： transistor;contact resistance;graphene;in-situ characterization;electron microscope