感应耦合等离子体刻蚀下GaN发光的原位测量及其损伤研究

项目名称： 感应耦合等离子体刻蚀下GaN发光的原位测量及其损伤研究

项目编号： No.11304298

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 数理科学和化学

项目作者： 陈苗根

作者单位： 中国计量学院

项目金额： 30万元

中文摘要： 等离子体对GaN及其相关半导体材料的刻蚀作用是备受关注的研究热点。由于等离子体本身具有很高的发光强度，GaN的发光通常是刻蚀后测量获得的，但在研究和应用中，往往希望实时监测其性能的变化并对其加以分析和控制。基于此，本项目拟通过实验研究和理论分析相结合的办法，对感应耦合等离子体刻蚀下GaN发光的原位测量及其损伤进行深入研究，将达到以下目标：（1）研究GaN在等离子体刻蚀下光致发光的原位测量技术，获得其发光特性；（2）获得样品刻蚀后的结构信息（如表面形貌、微观结构和组分比等）和电子特性（如I-V、C-V特性等），探究缺陷损伤的产生机制；（3）揭示其发光特性与损伤之间的关系，从而通过实时监测GaN在等离子体刻蚀下的发光来控制其损伤。通过本项目的研究，拓宽等离子体的应用范围，提高GaN的检测和分析水平，加深对GaN发光特性和损伤机制的认识，为GaN光电子器件的进一步发展提供理论依据和技术支持。

中文关键词： 氮化镓；感应耦合等离子体；原位测量；刻蚀损伤；

英文摘要： Recently, the plasma etching of GaN and its related semiconductor materials is one of the central topics. Previous works have mainly focused on the plasma-induced effects on the optical properties of GaN by using various ex-situ physical measurements after etching, because the plasma usually exhibits sharp luminescence with wide range of wavelengths. But in order to analyze the properties and control the quality of the materials, in-situ measuring is very important in the study and application. Based on this, the project will in situ measure GaN photoluminescence under inductively coupled plasma etching and analyzes its damages by using the method combining experimental research and theoretical calculation results, and will reach the following goals. (1) Grasping the technology of in situ measuring GaN photoluminescence under inductively coupled plasma etching, and discovering the photoluminescence characteristics;(2) Determining various structure characteristics (including surface morphology, microstructures and component) of the samples and electronic properties (including I-V，C-V curves), discovering the generation mechanism of the defect and damages; (3) Discovering the relation of the damages and photoluminescence characteristics, consequently controlling the damages by in situ measuring GaN photoluminesce

英文关键词： GaN；Inductively coupled plasma；In situ measurement；Etching damage；