硅通孔三维集成的高频电磁分析与优化设计

项目名称： 硅通孔三维集成的高频电磁分析与优化设计

项目编号： No.61274110

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 无线电电子学、电信技术

项目作者： 魏兴昌

作者单位： 浙江大学

项目金额： 78万元

中文摘要： 本项目针对先进硅通孔三维集成中元器件排布高密度、体积小型化、功能多元化的发展趋势，发展电磁-微电子多尺度、一体化建模技术，研究微观载流子效应在宏观电磁模拟中的准确表征方法；研发高效的散射矩阵仿真方法求解所建立的多尺度模型，突破任意分布和任意数量硅通孔阵列快速仿真的技术难题；对硅通孔三维集成结构进行准确建模和仿真。利用所建模型研究掌握硅通孔阵列的电磁自谐振特性、硅通孔与有源器件的耦合机理和耦合通道、三维集成封装的辐射干扰和辐射抗扰特性，全面分析硅通孔三维集成的电磁兼容问题。最终，设计新型的基于硅通孔阵列的微纳电磁带隙结构提高片内天线的性能，利用垂直硅通孔阵列构造水平射频传输通道。本项目的研究成果将为复杂三维集成的电磁设计提供有力的建模和仿真工具，并推动新型硅基射频器件的研究。

中文关键词： 硅通孔；三维集成；信号完整性；电磁兼容；散射矩阵方法

英文摘要： According to the high integration, miniaturization, and multifunctional trends of the development of three dimensional integration, in this project, we will develop electromagnetic-microelectronic multi scale co-modelling method,obtain the acurate description of the effect of carriers movement on the electromagnetic modelling, and develop the efficient scattering matrix simulation method for this electromagnetic-microelectronic model, which is specially proposed to solve the challenge simulation problem of the dense array of through silicon vias. By using the developed modeling and simulation methods we will analyze the self-resonance of the array of through silicon vias, coupling between through silicon vias and active devices, and radiated emission and radiated immunity of the three dimensional integration system, to fully analyze the electromagnetic compatibility issues related to the the three dimensional integration. Finally, we will propose novel prototypes of through silicon vias based electromagnetic bandgap structure to improve the performance of on-chip antennas, and novel prototypes of through silicon vias based horizontial RF signal channel. Through this project, we hope to provide a powerful modelling tool for the design of through silicon vias three dimensional integration and push the research of

英文关键词： Through silicon via；3D integration；signal integrity；electromagnetic compatibility；scattering matrix method