高耐压横向SJ器件等效衬底模型与新结构研究

项目名称： 高耐压横向SJ器件等效衬底模型与新结构研究

项目编号： No.61474017

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 无线电电子学、电信技术

项目作者： 李泽宏

作者单位： 电子科技大学

项目金额： 80万元

中文摘要： 针对现存疑义提出高压横向SJ器件等效衬底（ES）概念，揭示其机理和衬底辅助耗尽（SAD）效应本质，突破横向器件耐压硅极限。含三个创新点：1、提出横向SJ器件等效衬底（ES）模型。基于SJ和ES层场互作用机理，求解三维泊松方程，导出包含ES的SJ器件三维电场分布。揭示SAD的本质系ES场对SJ场的调制，消除途径是产生附加补偿场，从而获得优化ES条件；2、提出满足ES条件的无SAD效应器件新结构即电荷补偿层（CCL）结构，突破现有横向SJ耐压值，导出任意浓度分布下电场的Green函数解，进行实验研究；3、建立横向SJ器件硅极限理论。采用耐压归一化思想，发现漂移区掺杂浓度随N、P区宽长比减小而增加，获得普适设计公式。该理论用于纵向SJ器件，突破经典耐压比导1.33次方关系。本研究系与国际水平同步的应用基础性和超前性研究，意义重大。

中文关键词： 超结；等效衬底；硅极限；耐压模型；电荷补偿层

英文摘要： The concept of equivalent substrate (ES) of the high voltage lateral super junction(SJ) device has been proposed. With our innovative research on the fundamental theory and technology of this concept, the essence of the substrate assistant depletion(SAD) is revealed. The silicon limitof the lateral high voltage device can be broken through the application of this concept. There are three innovations in this study. 1 the ES model of the high voltage lateral SJ device is developed. Based of the interaction mechanism of the fields between the SJ and the ES layers, the essense of the SAD effect is the modulation of the ES field to the SJ field.Then the optimized substrate conditions are obtained. 2 A novel high voltage lateral SJ device structure with optimized charge compensation layer(CCL) is proposed, which has superior breakdown characteristic than the reported SJ devices. The electric field expression of the aribitrary doped CCL is driven from the Green function. The experimental resuls of the new device will be researched and the BV of the device is over 1000V. 3 A novel silicon limit model for the lateral SJ device is proposed. The BV of the device in the model is normalized to obtain the general design expressio. The doping concentration of the drift region is increased with the reduction of the breadth length ratio of the N and P region of the SJ layer.This study is of great significance, which can provide fundamental theory for application and advanced research.

英文关键词： super junction;equivalent substrate;silicon limit;breakdown model;charge compensation layer