铁电栅场效应晶体管存储器的单粒子效应研究

项目名称： 铁电栅场效应晶体管存储器的单粒子效应研究

项目编号： No.61274107

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 无线电电子学、电信技术

项目作者： 唐明华

作者单位： 湘潭大学

项目金额： 90万元

中文摘要： 存储器作为航天器电子系统的核心，其性能已成为航天器性能的主要衡量指标之一。在外层空间及核爆等辐照环境中，由单粒子效应引起的集成电路本身损坏或存储器信息变化，会导致整个系统崩溃，造成灾难性后果。铁电存储器由于具有信息高密度存储、快速擦写、低电压、低成本、低损耗、小体积和天然的抗辐照性能等显著优点，且制备工艺与标准CMOS工艺基本兼容，日益成为学术界、产业界(特别是军方)关注和研究的热点。本申请项目拟对铁电栅场效应晶体管(FeFET)存储器的单粒子效应(主要针对SEU、SET、MBU)进行系统研究，利用TCAD和3D器件仿真软件、结合蒙特卡罗模拟，按照"材料、器件、电路、芯片"的思路，深入探讨FeFET存储器的辐照损伤机理、建立抗单粒子效应的理论模型、提出高效的抗辐照加固措施，为研制抗单粒子效应的高性能铁电存储器及其大规模应用提供科学依据。

中文关键词： 铁电栅场效应晶体管；铁电存储器；单粒子效应；抗辐射加固技术；

英文摘要： Memory has been the core of spacecraft electronic systems, whose performance has become one of the most important parameters to the spacecraft. In the outer space and the radiation environment like nuclear explosion, the damage of integrated circuits or information change in memory which caused by single event effects (SEE) will lead to collapse of the entire system with disastrous consequences. Due to the excellent properties such as high storage density, low voltage, low cost, low power consumption, small unit size, natural radiation endurance and compatible process with standard CMOS process, ferroelectric memory has been increasingly focused by the academia and industry (especially the military) in recent years. This application project is intended to carry out a systematic research on the SEE of ferroelectric-gate field effect transistor (FeFET), mainly about SEU, SET, MBU, by means of 3D and TCAD simulation on device/circuit levels, combined with Monte Carlo simulation. According to the idea of "material-device-circuit-chip", a radiation damage mechanism of FeFET memory will be investigated in detail, and a theoretical model of torelance to SEE and some effective measurements of radiation hardness will be carried out, which is expected to provide a scientific basis for developing SEE hardened ferroelectric

英文关键词： ferroelectric gate field-effect transistor；ferroelectric memory；single event effect；radiation hardening techniques；