氧化铪基铁电薄膜材料及其存储单元性能研究

项目名称： 氧化铪基铁电薄膜材料及其存储单元性能研究

项目编号： No.61504115

项目类型： 青年科学基金项目

立项/批准年度： 2016

项目学科： 无线电电子学、电信技术

项目作者： 彭强祥

作者单位： 湘潭大学

项目金额： 18万元

中文摘要： 非挥发性铁电存储器具有高速度、低功耗、高抗辐射性能、长寿命的优异性能，在航空航天和民用电子领域具有广阔的应用前景。氧化铪基铁电材料是近年来备受瞩目的铁电存储器用材料，有望解决传统钙钛矿型铁电薄膜与CMOS工艺兼容性差的问题，有效提高铁电存储器密度，是当前学术界和产业界的一个研究热点。本申请项目拟从氧化铪基铁电材料的晶体结构、材料制备、电极界面效应与性能优化方法、存储单元器件性能等方面展开研究，揭示掺杂引入的氧化铪晶体演变规律，掌握氧化哈基铁电薄膜的制备方法和性能调控方法，制备出标准CMOS工艺兼容的高性能的铁电薄膜；通过基础工艺开发以及存储单元电路仿真，尝试解决位线电容匹配问题，研制铁电存储器存储单元。本项目研究结果将为氧化铪基铁电薄膜在存储器中的应用提供科学指导和实验依据。

中文关键词： 氧化铪基铁电薄膜；铁电存储器；电极技术；半导体工艺技术；界面效应

英文摘要： Due to its properties such as high speed, low consumption, excellent radiant resistance and long endurance, ferroelectric random access memory (FeRAM) shows a widespread application perspective in aerospace and consumer electronics fields. Hafnium oxide-based ferroelectric material is a newly developed FeRAM material alternative and becomes a hot research point immediately in these years. It is a promising material to solve the standard Complementary Metal Oxide Semiconductor (CMOS) process compatibility in conventional FeRAM manufacture with perovskite films. In this research project, we will launch the research from the crystal structure, electrode interface effect and characteristics optimization method to the performance of the storage unit. We aim to reveal the varied regularity of the crystal structure by doping, master the hafnium oxide-based ferroelectric thin film preparation method and acquire a high qualitative and CMOS process compatible hafnium oxide-based ferroelectric thin film. Through the device processing exploitation and capacitance model building, we try to solve the bit line capacitance matching problem and make ferroelectric memory cells. The research results of this project will provide scientific guidance and experimental basis for the hafnium oxide-based ferroelectric films’ application in FeRAM.

英文关键词： Hafnium oxide-based ferroelectric thin film;FeRAM;Electrode technology;Semiconductor processing technology;Interface effect