高压下p型ZnO单晶的生长及相关物理问题研究

项目名称： 高压下p型ZnO单晶的生长及相关物理问题研究

项目编号： No.11464035

项目类型： 地区科学基金项目

立项/批准年度： 2015

项目学科： 数理科学和化学

项目作者： 秦杰明

作者单位： 内蒙古民族大学

项目金额： 46万元

中文摘要： 利用压力与温度对材料热力学的影响，采取高压技术生长P型ZnO:Sb体单晶，解决常压下锑(Sb)在ZnO中掺杂浓度低及p型ZnO电学性能差等关键科学问题。研究p型ZnO:Sb的电学性能随Sb的含量、压力及温度变化规律和机制，通过掺杂浓度、压力和温度的调整,实现高质量p型ZnO:Sb的可控生长。研究p型ZnO:Sb中残余应力对其p型导电性能和质量等方面的影响规律，设计高压高温原位退火工艺，探讨减少p型ZnO:Sb中的残余应力方法，改善Sb在ZnO中的掺杂状态及质量，提高p型ZnO:Sb的电学及发光性能；通过理论计算和实验测量，阐明Sb在ZnO中的掺杂形态和能级以及p型ZnO:Sb的电学和发光性能,随压力、温度变化的机制；研究p型ZnO:Sb同质pn结的制备方法，实现高效紫外电致发光并阐明机理。

中文关键词： 高压；氧化锌；晶体生长；P型掺杂；电致发光

英文摘要： For solving the key scientific issues concerning about low acceptor concentration and poor electrical properties of p-type ZnO, in this project, we will adopt high pressure and high temperature technique to fabricate p-type ZnO single crystal according to the dependence of pressure and temperature on thermodynamic properties. The main study contents include: (i) designing high pressure and high temperature growth process and growth p-type ZnO with different Sb contents; (ii) studying electrical properties of p-type ZnO with the changes of Sb content, pressure and temperature and achieving the controllable sintering process by tuning composition, pressure and temperature; (iii) studying the effects of residual stress on p-type conduction of Sb-doped ZnO, designing in-situ high pressure and high temperature annealing process to decrease the residual stress, to improve Sb doping state and to increase optical and electrical properties of p-type ZnO; (iv) exploiting the theoretical calculations and experimental measurement to clarify the Sb doping state, concentration and energy level and to elucidate the dependent rules and mechanism of pressure and temperature on optical and electrical properties of p-type ZnO; (v) obtaining fabrication technique of ZnO-based homogeneous p-n junction (p-ZnO:Sb/n-ZnO) and realizing ultraviolet electroluminescence from ZnO p-n homojunction as well as elucidating the mechanism of ultraviolet light emitting. This project is of significance to solve present difficulties of p-type ZnO and to develop ZnO-based photoelectronic devices.

英文关键词： high pressure;ZnO;crystal growth;p-type doping;electrofluorescence