柔性金属氧化物薄膜晶体管研究

项目名称： 柔性金属氧化物薄膜晶体管研究

项目编号： No.61306099

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 无线电电子学、电信技术

项目作者： 王磊

作者单位： 华南理工大学

项目金额： 25万元

中文摘要： 基于金属氧化物（Metal Oxide，简称MO，如ZnO、In-Ga-Zn-O等）半导体材料的TFT器件具有电子迁移率高、均匀性好、成本低等优势，非常适合制备低成本的柔性TFT器件，是当前学术界和工业界研究的热点。本申请自主开发镧系（Ln）稀土掺杂的铟-锌-氧（In-Zn-O，IZO）氧化物半导体材料，研究Ln-IZO材料的内部规律，包括其成分、薄膜结构、能带结构、载流子输运规律等，并结合塑料衬底上TFT器件结构、界面物理和制备工艺的研究，建立物理模型，深层次指导材料设计和器件制备。通过研究提高Ln-IZO TFT迁移率和稳定性的机理，研究适用于柔性塑料衬底的低温（150℃以下）Ln-IZO TFT关键制备技术，研究Ln-IZO TFT器件与塑料衬底的界面接触特性等基本科学问题，争取自主知识产权，实现高性能的柔性MOTFT器件和基板阵列，并成功应用于能弯曲、可形变的柔性OLED显示屏。

中文关键词： 薄膜晶体管；柔性器件；界面；半导体器件；薄膜封装

英文摘要： Metal oxide,such as ZnO and In-Ga-Zn-O,is considered to be one of the most suitable device to fabricate flexible thin film transistor(TFT) because of their advantadges in high carrier mobility, good uniformity, and low cost. MOTFT has atttacted much attention of the scientists and industrial circles. In this application project we will develop Lanthanum(Ln) rare earth doped IZO metal oxide matrials. Then we will research the internal rule of the MO material, including its composition, film structure, energy band structure, and the carrier transportation rule. We will also study the device structure, interface physics, and the process based on flexible substrate. By studying the reason of high mobility and stability, Ln-IZO TFT fabricaton technology suitable for flexible substrate (below 150℃), characteristics of the interface between Ln-IZO and the plastic substrate, we can clearly master the scientific problems, achiving independent intellectual property righs, realize high-performance flexible MOTFT devices and array. Finally, we will fabricate successfully flexible AMOLED display with good bendability.

英文关键词： Thin Film Transistor；Flexible Device；Interface；Semiconductor Device；Thin Film Encapsulation