利用物理学基本原理对经典肖克莱半导体二极管理论的修正

项目名称： 利用物理学基本原理对经典肖克莱半导体二极管理论的修正

项目编号： No.11204209

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 物理学I

项目作者： 冯列峰

作者单位： 天津大学

项目金额： 30万元

中文摘要： 肖克莱创建的作为半导体器件物理重要基础内容的p-n结理论一直被奉为经典理论。最近我们的精确实验和理论研究表明，建立在耗尽层假设的这个理论在正向大电压下与实验严重不符。本项目拟利用物理学基本原理对肖克莱理论模型展开研究，进行修正，主要工作为：1）利用自建的正向交流小信号结合直流I-V特性的方法精确表征半导体器件的结电容、结电导、结电压、理想化因子等结参量，分析载流子浓度、寿命以及费米能级与这些结参量之间的关系；2）借鉴Hess的等效电路模型，舍弃耗尽层及其边界条件等基本假设，从基本物理原理出发，计算上述电学特性和复合发光特性；3）分析实验和理论计算结果，深入探讨利用经典肖克莱模型与基本物理原理计算结果存在差异的物理机制。本项目的最终目标是对肖克莱模型经典假设的适用条件，主要推论的正确性及其在异质结构和量子阱结构中的推广做出明确的结论，提出修正理论。

中文关键词： 负电容；半导体器件；阈值区；光电特性；肖克莱pn结理论

英文摘要： Semiconductor p-n theory founded by Shockley has always been considered as the classical theory of the semiconductor devices physics. However, our accurate experimental and theoretic results confirmed that Shockley's theory basing on the classical Depletion layer assumption, therofore, can not explain some physical phonomena at high forward bias voltage. This project intends to study the Shockley theory model using the basic principles of physics from the following: 1) Using self-built method based on alternative current (AC) small signal and I-V plots we will accurately characterize the junction parameters of p-n junction samples and semiconductor devices, such as junction voltage, junction conductance, junction capacitance and ideality factor. The relation between the junction parameters and carriers' concentration and lifetime as well as the separation of the Quasi-Fermi level will also be clarified. 2) The above abnormal electrical properties and the recombination luminescent properties will be calculated by the model based on the basic principles of physics and Hess's equivalent circuit rather than the classical depletion layer assumption. 3) From analyzing the experimental and theoretical results, the mechanism of the difference results calculated by the model based on the basic principles of physics and t

英文关键词： Negative capacitance (NC)；Semiconductor devices；Threshold region；photoelectric properties；Shockley's p-n junction theory