高性能聚噻吩电存储材料的制备及性能研究

项目名称： 高性能聚噻吩电存储材料的制备及性能研究

项目编号： No.51303084

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 一般工业技术

项目作者： 李月琴

作者单位： 南京林业大学

项目金额： 25万元

中文摘要： 聚合物存储材料在一定的电压下存在不同导电状态，可以实现超高密度和超大容量的信息存储，在高速度计算领域有着非常广泛的应用前景。聚噻吩及其衍生物通过掺杂极化能调节载流子的浓度或者电荷迁移速率，这种特性开辟了聚吩材料在电双稳态存储领域的应用。本项目设计并制备侧链含有烷基醚基和二乙醇氨基的聚噻吩以及N-烷基醚吡咯并吡咯二酮与噻吩的共聚物，以提高聚噻吩的电存储性能。以简单的旋转涂膜方式制备新型"有机场效应晶体管(OFET)"结构的聚噻吩存储器件。研究器件的电存储操作机制，借助HRSEM、AFM、GIXD等技术探明薄膜形貌、厚度、形态与存储性能之间的关系。借助空间分辨拉曼光谱在分子尺度上深入系统地研究聚噻吩材料的极化过程，为聚噻吩存储材料提供坚实的理论依据。

中文关键词： 聚噻吩；功能化；存储；烷氧基；氧化还原

英文摘要： Polymeric memory materials possess different conductivity states at a certain applied voltage, which can fulfill ultra-high density and ultra-huge capacity of data storage, thus they are promising candidates for application in high-speed computing field. Polythiophene and its derivatives can be easily polarized by dopping process to tune carrier concentration or charge-transfer rate, which enable theses materials promising applications in polymeric electrical memory field. To improve the memory performance of polythiophenes, this project is aimed to design and prepare polythiophenes bearing alkyl esters and diethanolamino side chains, and poly[N-alkyl ether diketopyrrolopyrrole-co-thiophene] copolymer. Memory devices based on these materials with the OFET configuration will be fabricated by simple spin-coating method. The electrical response of the devices and the relationship between the surface morphology/film thickness and the memory performance will be investigated by HRSEM, AFM and GIXD method. The polarization process of polythiophene under bias will be explored by spatially resolved Raman spectroelectrochemistry. These results would supply a sound mechanism of polythiophene memory devices.

英文关键词： polythiophene；functional；memory；alkoxyl Substituted；redox