项目名称: 拓扑绝缘体表面上铁磁性薄膜的制备及其生长界面新奇电子状态的研究
项目编号: No.11304338
项目类型: 青年科学基金项目
立项/批准年度: 2014
项目学科: 数理科学和化学
项目作者: 叶茂
作者单位: 中国科学院上海微系统与信息技术研究所
项目金额: 30万元
中文摘要: 本课题将使用分子束外延生长方式在拓扑绝缘体表面生长3d过渡金属元素的铁磁性薄膜,并进一步研究拓扑绝缘体与铁磁性薄膜外延生长界面的自旋极化拓扑电子状态在时间反演对称性被打破时的演化。为了制备高质量的薄膜,并实现铁磁性秩序的导入,本研究课题将探索使用多种不同类型拓扑绝缘体作为生长磁性薄膜的衬底,同时通过对拓扑绝缘体表面的载流子类型和浓度的调控,实现基于Ruderman-Kittel-Kasuya-Yosida(RKKY)相互作用机理的铁磁性秩序。我们将使用原位扫描隧道显微镜和角度分辨光电子谱对薄膜的生长模式以及质量进行研究和表征,优化磁性薄膜的生长条件。进而通过x光磁性圆二色性谱研究薄膜的磁性性质包括磁性各向异性。最后我们将使用具有高探测深度的低能量光子角度自旋分辨光电子能谱对界面的电子状态进行直接观测,从而系统地研究薄膜的磁性特征对拓扑绝缘体与磁性薄膜界面处的新奇电子状态的影响。
中文关键词: 拓扑绝缘体;量子反常霍尔效应;铁磁性;X射线磁圆二色性能谱;X射线吸收精细结构谱
英文摘要: In this project wesynthesize ferromagnetic films by molecular-beam-epitaxy method on topological insulator surface and investigate the electronic states at the interface between topological insulator and ferromagnetic film to study the evolution of the novel topological electronic states with a broken time-reversal-symmetry. In order to realize film with high quality and ferromagnetism grown on topological insulator surface, our research will be conducted on various kinds of topological insulators. We investigate the growth mode and quality of the magnetic film by in-situ scanning tunneling microscopy and angle-resolved photoemission spectroscopy in order to optimize the growth condition. The long-range ordered ferromagnetism will be induced into the film and thus at the interface based on Ruderman-Kittel-Kasuya-Yosida(RKKY) mechanism by fine tuning of the carrier type and intensity of the substrate topological insulator. We use x-ray magnetic circular dichrorism to investigate the magnetic properties including the magnetic anisotropy to ensure the condition of breaking time-reversal-symmetry. Finally, we directly observe the evolution of the novel topological electronic states at the interface between topological insulator and ferromagnetic film by means of low energy photon exited spin- and angle-resolved phot
英文关键词: topological insulator;quantum anomalous Hall effect;ferromagnetism;XMCD;EXAFS