氮化镓基浮空复合场板功率器件研究

项目名称： 氮化镓基浮空复合场板功率器件研究

项目编号： No.61204085

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 信息四处

项目作者： 毛维

作者单位： 西安电子科技大学

项目金额： 30万元

中文摘要： 当前，新型高性能、低损耗功率器件的研发已成为提高电能利用率、节约能源、缓解能源危机的有效途径之一。本课题旨在研究一种新型场板功率器件- - GaN基浮空复合场板功率器件，开展器件理论模型和实现方法的探索。重点对器件工作机理和理论解析模型，器件结构优化，以及浮空复合场板功率器件实现方法开展研究，最终得到浮空复合场板功率器件的二维全解析模型和高性能的功率器件样品，并构建一套通用性强、可移植性好和应用性强的场板器件解析建模的方法和理论。本项目研究将为新型GaN基高耐压功率器件的发展奠定基础，为电力电子技术的发展注入新的活力。

中文关键词： GaN基浮空复合场板功率器件；二维全解析理论模型；器件工艺实现方法；新型器件结构和制造工艺；器件机理分析

英文摘要： Nowadays, the developments of the novel power devices with high performance and low power losses have been one of the effective approaches to improve the utilization rate of power energy, to save energy and to reduce energy crisis. A novel field-plated power device, named as GaN-based power device with floating field-plates is studied in this project. And the device theoretical models and the implementation methods are explored. Importance is attached to researches on the device operation mechanisms and the theoretical analytical models, the optimum design of the device structures, and the implementation methods of the power device with floating field-plates. Finally, the two-dimensional fully analytical models and the power device samples with high performance of the power device with floating field-plates are obtained. And a set of theories and methods for the development of the field-plated devices analytical models, with good universality, transplantation and applicability, is developed. The researches in this project will lay the foundation for the development of the novel GaN-based high-breakdown power device, and inject fresh energy to the development of the power electronics technology.

英文关键词： GaN-based power devices with floating field-plates；two-dimensional fully analytical models；device process implementation methods；novel device structures and fabrication processing；device mechanisms analysis