氧化物晶体生长界面本征非稳态效应研究

项目名称： 氧化物晶体生长界面本征非稳态效应研究

项目编号： No.51472263

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 一般工业技术

项目作者： 潘秀红

作者单位： 中国科学院上海硅酸盐研究所

项目金额： 81万元

中文摘要： 界面边界层内的质量扩散及界面动力学效应是晶体生长的本征特性，它反映了晶体结晶的内在规律，与之相关的界面形态非稳定性制约了晶体的结构完整性，本项目选择几种典型氧化物作为研究对象，通过理论计算并结合实验数据对本征非稳定性进行定量研究。理论上对晶体生长的控制方程进行简化和解析，给出表征界面本征特性的二个无量纲参量表达式：垂直于界面的动力学Peclet数Pk和台阶运动的Peclet数Ps，它们是材料生长固有物性的函数。实验上，利用微分干涉显微镜实时观察手段，结合原子力显微镜原位观察技术，定量研究高温晶体生长界面动力学、界面输运、台阶高度的各向异性特征，研究不同Peclet数值材料体系界面形貌由稳态向非稳态演变的过程，结合理论研究的结果，分析平坦界面保持稳定的临界尺寸、界面为邻位面时形貌产生扭曲的临界波动角，针对不同材料体系的本征特性，给出生长晶体完整性难易程度的定量判据。

中文关键词： 晶体生长；本征特性；界面非稳定性

英文摘要： The intrinsic morphological instability of the growing interface, which is in close correlation with coupled interfacial transport and interfacial dynamics, prevents the achievement of high-quality crystals with free defect. In this project, the intrinsic morphological instability will be quantitatively studied for the growth of several typical oxide crystals, by theoretical coupled experimental methods. In theory, the predominant equations for crystal growth is simplified and resolved. Then two typical dimensionless parameters are raised to characterize the intrinsic properties. They are peclet number Pk, characterizing the interfacial property perpendicular to the interface, and peclet number Ps characterizing the interfacial property parallel to the interface, respectively. In experiments, the evolution of interfacial morphology will be investigated by in situ observation method. The critical size of crystal beyond which the flat growing interface will become unstable, as well as the critical wave angle for deformation of vicinal interface will be sdudied quantitatively by both theory and experiment. Anyway, a criterion will be put forward to indentify the ability to obtain high quality crystals, based on the investigation of intrinsic property.

英文关键词： crystal growth;intrinsic characteristic;interfacial morphological instability