新型半导体基垂直磁各向异性材料及器件

项目名称： 新型半导体基垂直磁各向异性材料及器件

项目编号： No.61334006

项目类型： 重点项目

立项/批准年度： 2014

项目学科： 无线电电子学、电信技术

项目作者： 赵建华

作者单位： 中国科学院半导体研究所

项目金额： 290万元

中文摘要： 近年来半导体自旋电子学研究无论在材料制备还是自旋在半导体中的产生、注入、输运、调控和检测等方面均取得了十分重要的进展。但是，迄今为止，对半导体自旋电子器件结构进行的自旋量子调控及部分功能演示基本上是以面内易磁化材料作为自旋极化源，当器件尺寸减小至纳米量级时，单元磁结构的面内退磁场和超顺磁效应等均会严重影响器件的性能和稳定性。半导体基垂直磁各向异性薄膜有望规避这个问题。本项目拟针对目前存在的大部分垂直磁各向异性材料与半导体结构上存在着严重失配、难以保证界面及铁磁层晶体质量的难题，探索制备与主流半导体结构和工艺兼容的高品质垂直磁各向异性材料，研究高性能半导体基垂直磁各向异性隧道结、自旋发光二极管和非局域环状径向自旋阀的关键制备工艺和自旋调控技术，为研制新型易于超高密度集成、超高速和低功耗运行、超高热稳定性和抗电磁干扰的半导体基垂直磁各向异性自旋电子器件提供物理指导和进行前期技术储备。

中文关键词： 半导体自旋电子学;垂直磁各向异性;垂直磁各向异性铁磁/半导体异质结构;新型自旋电子器件;分子束外延生长

英文摘要： Recent years, the important progress has been made in semiconductor spintronics, not only in material preparation, but also in spin generation, injection, transport, manipulation and detection in semiconductors. So far, the spin manipulation and functional demo in semiconductor spintronic devices are generally based on plane magnetized materials as spin-polarized sources. But, when the size of devices is reduced to nano-scale, their performance and stability will be affected seriously by plane demagnetizing field and superparamagnetism of unit magnetic structure. Perpendicularly magnetized films epitaxied on semiconductors are expected to circumvent this problem. This project will focus on the problem that many perpendicular magnetized materials seriously mismatch with mainstream semiconductors GaAs and Si in the structure, which makes it difficult to ensure the interface and the crystal quality of ferromagnet/semiconductor hybrids. We plan to grow the high-quality perpendicular magnetized films on semiconductors, and explore the critical processing techniques and spin manipulation manners of high-performance magnetic tunnel junctions, spin light-emitting diodes and nonlocal annular radial spin valves based on perpendicular magnetized ferromagnet/semiconductor hybrids. We will provide the useful information and instruction for the future novel semiconductor spintronic devices with ultra-high integrated density, ultra-high speed and ultra-low power, ultra-high thermal stability and resistance to electromagnetic interference.

英文关键词： Semiconductor spintronics;PMA;PMA F/S heterostructures;Novel spintronic devices;Molecular-beam epitaxy