硅纳机电传感结构巨压阻调控模型构建与实验研究

项目名称： 硅纳机电传感结构巨压阻调控模型构建与实验研究

项目编号： No.61306138

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 无线电电子学、电信技术

项目作者： 张加宏

作者单位： 南京信息工程大学

项目金额： 25万元

中文摘要： 利用纳米尺度硅的巨压阻效应有望显著提高传感器的灵敏度，然而巨压阻效应机理尚未获得透彻的研究。本项目拟采用第一性原理计算、k.p微扰理论模拟和实验测量验证相结合的技术，通过定量求解纳米尺度硅-二氧化硅界面缺陷态、应力、杂质浓度三者的内在关系来研究硅纳米结构的巨压阻特性。为给理论分析提供实验参数与结果对比，拟试制纳米尺度硅传感阵列测试结构，提高制备工艺，尤其是界面处理工艺的一致性和重复性。主要研究内容包括：揭示硅纳机电传感结构巨压阻机理；确立快速优化算法构建高效率微观巨压阻理论模型；探明硅纳机电传感结构灵敏度放大原理和噪声机制。拟提出的巨压阻调控模型的优势包括：（1）可对纳米到百纳米量级厚的硅纳机电传感结构的压阻特性进行快速的定量描述；（2）引入了反映硅纳机电传感结构整体性能的特征参数，为研制超高灵敏度的硅纳机电巨压阻传感结构提供理论依据。

中文关键词： 巨压阻效应；硅纳米结构；微观优化模型；制造工艺；数据融合

英文摘要： The sensitivity of the sensor can be significantly improved by using giant piezoresistance effect of the silicon nanostructures,however,the mechanism of giant piezoresistance effect has not yet been thoroughly studied.The project intends to adopt the combined technology of first-principles calculations, k.p perturbation theory and experimental measurements to quantitatively analyze the intrinsic relationship among interface defect states of nanoscale silicon-silicon dioxide, stress and impurity concentrations for studying the giant piezoresistive characteristics of silicon nanostructures. In order to provide the experimental parameters for theoretical analysis and compare the results, we will manufacture nanoscale silicon sensor test array, and improve the preparation process, especially the consistency and reproducibility of the interface treatment process.Prominent research topics include revealing the mechanism of giant piezoresistance of silicon electromechanical sensing structure,establishing the fast optimization algorithm and then building the high efficiency micro piezoresistive model,and ascertaining the amplification principle of silicon nanoelectromechanical sensing structure sensitivity and noise mechanism. The advantages of this giant piezoresistive regulation model include: (1) rapid quantitative d

英文关键词： giant peizoresistive effect；silicon nanostructures；microscopic optimization model；manufacturing process；data fusion