纳米硅量子点多层结构的掺杂、近红外光发射与非线性光学性质

项目名称： 纳米硅量子点多层结构的掺杂、近红外光发射与非线性光学性质

项目编号： No.11274155

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 数理科学和化学

项目作者： 徐骏

作者单位： 南京大学

项目金额： 90万元

中文摘要： 对纳米硅量子点掺杂及掺杂对量子点性质的影响的研究无论是在基础研究方面还是在量子点的器件应用方面都具有重要的科学意义与研究价值。本项目是基于我们已有的研究基础，利用制备掺杂非晶硅基多层结构，结合限制性晶化原理与技术，在获得尺寸可控的纳米硅量子点的同时，通过改变制备时的掺杂条件以获得具有不同掺杂类型（p型和n型）和掺杂浓度的纳米硅量子点多层结构，实现对量子点的掺杂。从物理上深入理解在纳米硅量子点中的掺杂机理与掺杂效果，系统研究掺杂对纳米硅量子点的光吸收，载流子输运和载流子复合等物理过程的影响，特别是掺杂引起的纳米硅量子点近红外光发射现象的本质和起源。同时，研究纳米硅量子点中的非线性光学性质以及掺杂对非线性光学特性的作用。通过研究，希望能对纳米硅量子点的掺杂及掺杂对纳米硅量子点的发光和非线性光学性质的影响等关键问题有更深入的理解，为纳米硅量子点材料在光电器件上的应用打下提供更为坚实的基础。

中文关键词： 纳米硅；掺杂；光电特性；形貌与特性调控；

英文摘要： The study on the doping in nano-crystalline Si quantum dots (QDs) and the influences of doping on the properties of Si QDs is one of the important issues both for fundamental research interesting and for the device applications. The present project is to realize the fabrication of doped Si QDs multilayers with different doping type (p- and n-type) and doping concentrations by constrained crystallization of doped amorphous Si-based multilayers based on our previous work, in which the dot size can be well controlled. We will focus on the doping mechanism in Si QDs and the novel doping behaviors which are believed to be different from that in bulk counterpart. We will systematically study the optical absorption. Carrier transport as well as the recombination process in doped Si QDs, especially the origination of the near infrared light emission from doped Si QDs which is scarcely reported before. Meanwhile, we will also investigate the nonlinear optical property of intrinsic and doped Si QDs. We hope to give the deep insight into the doping mechanism in Si QDs and their effects on the luminescence characteristics and nonlinear optical properties via our research work and provide the solid base for developing the Si QDs-based optoelectronic devices.

英文关键词： Nanocrystalline Si；doping；photo-electronic property；modulation of morphology and performance；