The accurate electromagnetic modeling of both low- and high-frequency physics is crucial in the signal and power integrity analysis of electrical interconnects. The boundary element method (BEM) is appealing for lossy conductor modeling because it can capture the frequency-dependent variation of skin depth with only a surface-based discretization of the structure. Conventional BEM formulations rely on the mutual coupling of electric and magnetic fields, and can become inaccurate or unstable at low frequencies. We develop a new full-wave BEM formulation based on potentials which can accurately model lossy conductors from exactly DC to very high frequencies. A new set of simple boundary conditions is proposed along with a modified Lorenz gauge to ensure that the proposed formulation has a stable condition number down to DC. Moreover, coupling the potential-based integral equations to a circuit model allows the straightforward extraction of network parameters. Realistic numerical examples at both the chip and package level demonstrate the accuracy and stability of the proposed method from DC to high frequencies, beyond the capabilities of state-of-the-art BEM formulations based on fields.
翻译:低频和高频物理学的准确电磁建模对于电路连接的信号和功率完整性分析至关重要。边界元件法(BEM)呼吁进行丢失的导体模型模型,因为它能够捕捉皮肤深度的频率变化,只有地面离散结构才能捕捉到。常规BEM配方依靠电场和磁场的相互结合,在低频率时可能会变得不准确或不稳定。我们开发了一种新的全波BEM配方件,这种配方基于从完全的DC到非常高的频率,能够准确模拟损失导体。提出了一套新的简单边界条件,同时提出了一套经修改的Lorenz测算仪,以确保拟议的配方体有一个稳定的状态编号到DC。此外,将基于潜在整体方程式的方程式与电路模型相结合,使得能够直接提取网络参数。芯片和包级的实证数字实例表明拟议方法从DC到高频率的准确性和稳定性,超出了基于田地的尖端BEM配方的能力。