二维MoS2/Alq3的无机/有机异质结的可控构建及其系统协同发光的研究

项目名称： 二维MoS2/Alq3的无机/有机异质结的可控构建及其系统协同发光的研究

项目编号： No.51472219

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 一般工业技术

项目作者： 徐明生

作者单位： 浙江大学

项目金额： 83万元

中文摘要： 针对正蓬勃兴起的二维层状晶体及其异质结和有机光电子领域，意图融合无机二维晶体和有机半导体的独特光电特性，本项目以范德华外延技术为基础，致力于二维MoS2/Alq3的无机/有机半导体异质结的可控构建及其系统协同发光的研究。建立和发展二维MoS2/Alq3范德华异质结界面结构的精确控制方法，实现Alq3有机分子在高质量二维MoS2原子层上可控制备；建立和发展异质结界面的原子分辨的结构和光电性能的表征，揭示异质结的界面结构与性能之间的关系；围绕二维MoS2/Alq3异质结系统，开展新型发光器件的应用探索，实现其功能的优化和新功能的扩展，阐明异质结系统的协同发光机制。本项目发展范德华外延技术在无机二维晶体原子层上制备高质量的有机半导体材料，拓展无机二维原子晶体材料/有机分子半导体的异质结研究的新方向，提升我国在发光二极管方面的创新能力。

中文关键词： 二维层状材料；异质结；光电性能；有机半导体；范德华外延

英文摘要： Focusing on the fast and dynamically growing fields of two-dimensional (2D) layered materials and organic electronics and with ambition to integrating the unique optical and electronic properties of the relevant materials, we, based on van der Waals epitaxy (vdW) growth, will perform symmetric study on Controllable construction of 2D MoS2/Alq3 vdW heterostructure and it synergistic light-emitting behavior. 1) Establishment of novel methods for fabricating the heterostructure with fine control over the crystalline structures of both the materials, achieving highly-ordered Alq3 molecules on high-quality MoS2 vdW layers; 2) Development of advanced characterization techniques for atomic resolution study of the structure-property relationship of the heterostructures; 3) Designing and fabricating high-performance light-emitting devices based on the heterostructures and revealing the basic synergistic light-emitting mechanism. In this project, we will develop vdW strategy for growing high-quality organic semiconductors on 2D layers and achieve synergistic effects of the heterostructural system. The implementation of this project will allow us to expand the heterostructures based on novel 2D materials into inorganic 2D/organic filed, in which there would have new phenomena, and will contribute technological innovation and progress in light-emitting devices in China.

英文关键词： Two-dimensional layered materials;Heterostructures;Optoelectronic properties;Organic semiconductors;van der Waals epitaxy