基于GaxIn1-xAsySb1-y/GaSb量子阱SESAM锁模的2 - 2.5 μm波段超快激光特性研究

项目名称： 基于GaxIn1-xAsySb1-y/GaSb量子阱SESAM锁模的2 - 2.5 μm波段超快激光特性研究

项目编号： No.61475088

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 无线电电子学、电信技术

项目作者： 杨克建

作者单位： 山东大学

项目金额： 80万元

中文摘要： 基于GaSb衬底的III-V族半导体化合物GaxIn1-xAsySb1-y/GaSb量子阱结构SESAM具有亚皮秒超快弛豫时间，而且晶格失配小、光学质量好、参数易于调节，嵌入AlAsSb/GaSb材料作为布拉格反射层可实现几百nm的高反射带宽，是2 - 2.5 μm波段超快激光的理想锁模元件。本项目以GaxIn1-xAsySb1-y/GaSb量子阱结构SESAM为对象，表征SESAM的光谱特性和非线性参数,研究其2 - 2.5 μm波段的饱和吸收机理及影响因素，揭示其2 - 2.5 μm波段超快激光锁模的基本原理和稳定运转条件，实现2 - 2.5 μm波段宽带增益介质Tm3+:Lu2O3和Cr2+:ZnSe连续波锁模和波长可调谐超快激光运转，旨在获得2μm波段W级和2.5 μm波段百mW量级飞秒激光输出，为全固态高效率2 - 2.5 μm波段超快激光的实现提供规律性依据。

中文关键词： 锑化物量子阱；半导体可饱和吸收镜；被动锁模；超快激光；2；-；2.5；μm

英文摘要： GaSb- based SESAMs with III-V semiconductor compound GaxIn1-xAsySb1-y/GaSb quantum well structure possess properties of sub-picosecond ultrafast relaxation time, small lattice mismatch, excellent optical quality and feasible design of growth parameters. By incorporating lattice-matched AlAsSb/GaSb distributed Bragg reflectors, an exceptionally broad reflectivity band over hundreds of nanometers is enabled, thus GaxIn1-xAsySb1-y/GaSb quantum well SESAMs become the ideal mode-locker for ultrafast lasers working at spectral region of 2 - 2.5 μm. In this project, with GaxIn1-xAsySb1-y/GaSb quantum well SESAMs as the subject, we plan to characterize the spectral property and nonlinear parameters of SESAMs, study the saturable absorption mechanism and influencing factors at 2 - 2.5 μm band, reveal the basic principle and stable operation conditions for mode-locking in ultrafast lasers at 2 - 2.5 μm, and aim to realize continuous-wave mode-locked and wavelength tunable ultrafast lasers at 2 - 2.5 μm based on the Tm:Lu2O3 and Cr2+:ZnSe crystals with broad gain bandwidths. Through the project, ultrafast femtosecond pulses at 2 μm with Watt-level output and 2.5 μm with hundreds of milli-watts output are expected, which could provide regular basis for the realization of all-solid-state 2 - 2.5 μm ultrafast lasers with high efficiency.

英文关键词： Antimonide quantum wells;Semiconductor saturable absorber mirror(SESAM);Passive mode-locking;Ultrafast laser;2 - 2.5 μm